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CPH3145-TL-E

Onsemi

CPH3145-TL-E by Onsemi

CPH3145-TL-E by Onsemi is a PNP BJT with 2A IC, 200 hFE, and 0.9W power dissipation. Ideal for surface mount applications, it operates up to 150°C making it suitable for various small signal amplification tasks.

Median Price

$0.169

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 25,767 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.222

25,767

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-

-

$0.222

Verical

USA . 23,856 parts In-Stock

1+ parts

-

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10k+ parts

$0.144

23,856

-

-

-

$0.144

Rochester

USA . 1,911 parts In-Stock

1+ parts

-

100+ parts

$0.148

1k+ parts

$0.123

10k+ parts

$0.110

1,911

-

$0.148

$0.123

$0.110

DigiKey

USA . 1,911 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.190

1,911

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-

-

$0.190

Distributors (In-Stock)

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Digiode

USA . 1,050 parts In-Stock

1+ parts

$0.122

100+ parts

-

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1,050

$0.122

-

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Vyrian

USA . 2,345 parts In-Stock

1+ parts

$0.128

100+ parts

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2,345

$0.128

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Flip Electronics

USA . 27,000 parts In-Stock

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27,000

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DigiKey Marketplace

USA . 26,856 parts In-Stock

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26,856

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Chip Stock

USA . 23,000 parts In-Stock

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23,000

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ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

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2,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 682 parts In-Stock

1+ parts

$0.115

100+ parts

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682

$0.115

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Corohmni

South Africa . 417 parts In-Stock

1+ parts

$0.128

100+ parts

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417

$0.128

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Continental Prestige Electronics

USA . 30,000 parts In-Stock

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$0.171

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30,000

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$0.171

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QUARKTWIN TECHNOLOGY LTD

USA . 14,730 parts In-Stock

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14,730

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Perfect Parts

USA . 7,034 parts In-Stock

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7,034

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Lixinc

USA . 6,123 parts In-Stock

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SupplyDigital Components

Austria . 4,677 parts In-Stock

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4,677

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Kulean Microsystems

USA . 3,705 parts In-Stock

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3,705

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Problanco Electronics

Mexico . 2,405 parts In-Stock

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2,405

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TANS Electronics

Latvia . 2,101 parts In-Stock

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2,101

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UHIMA Technologies

Türkiye . 895 parts In-Stock

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895

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Native Components

USA . 230 parts In-Stock

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230

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Northwest PG Solutions

USA . 72 parts In-Stock

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72

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Overview

Discover the unparalleled performance of the CPH3145-TL-E by Onsemi, a top-of-the-line PNP Small Signal Bipolar Junction Transistor. With a reputation for excellence, Onsemi delivers cutting-edge technology and reliable products. This transistor is perfect for a wide range of applications, offering high power dissipation, strong current gain, and exceptional operating temperature capabilities. Elevate your projects with the value and benefits that only Onsemi can provide, setting you apart from the competition.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits and can easily control higher voltage loads. This makes the product suitable for various power management applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to implement, reducing the overall complexity of the system.

Surface Mount: YES

Surface mount design allows for compact and space-saving PCB layouts, making it ideal for applications where size and weight are critical factors.

Maximum Power Dissipation (Abs): 0.9 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring reliable performance in demanding conditions.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures consistent and accurate amplification of signals, providing stable and reliable operation in various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and harsh environments, increasing its versatility and reliability in different scenarios.

Maximum Collector Current (IC): 2 A

The high maximum collector current allows the transistor to handle substantial current loads, making it suitable for applications requiring power switching and control.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides excellent solderability and reliability, ensuring secure connections and longevity in the product's lifecycle.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature minimizes the risk of component damage during the manufacturing process, enhancing the overall quality and reliability of the product.

Peak Reflow Temperature °C: 260

The high peak reflow temperature enables efficient soldering processes, ensuring strong and lasting connections on the PCB, contributing to the durability and performance of the product.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3145-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CPH3145-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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