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CPH3205-TL-E

Onsemi

CPH3205-TL-E by Onsemi

CPH3205-TL-E by Onsemi is a NPN BJT transistor with max. VCE of 50V and IC of 3A. With hFE of 200, it's ideal for switching applications at a transition frequency of 380MHz. This surface-mount device in a small outline package is designed for high-speed performance.

Median Price

$0.224

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,000 parts In-Stock

1+ parts

$0.209

100+ parts

$0.196

1k+ parts

$0.177

10k+ parts

-

15,000

$0.209

$0.196

$0.177

-

Flip Electronics (Authorized)

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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27,000

-

-

-

-

DigiKey

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.240

12,000

-

-

-

$0.240

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,548 parts In-Stock

1+ parts

$0.199

100+ parts

-

1k+ parts

-

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1,548

$0.199

-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

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500

$0.411

-

-

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ACDS - Activité Composants Distribution Service

France . 63,000 parts In-Stock

1+ parts

-

100+ parts

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63,000

-

-

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DigiKey Marketplace

USA . 27,000 parts In-Stock

1+ parts

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27,000

-

-

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Vyrian

USA . 22,632 parts In-Stock

1+ parts

-

100+ parts

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22,632

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-

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Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

-

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12,000

-

-

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Chip Stock

USA . 3,800 parts In-Stock

1+ parts

-

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3,800

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,326 parts In-Stock

1+ parts

$0.188

100+ parts

-

1k+ parts

-

10k+ parts

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2,326

$0.188

-

-

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Corohmni

South Africa . 310 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

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310

$0.209

-

-

-

Continental Prestige Electronics

USA . 6,152 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

-

10k+ parts

$0.403

6,152

$0.411

-

-

$0.403

Argo Parts USA

USA . 2,470 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

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10k+ parts

$0.399

2,470

$0.411

-

-

$0.399

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

$0.390

10k+ parts

$0.382

100

$0.411

-

$0.390

$0.382

Perfect Parts

USA . 141,120 parts In-Stock

1+ parts

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100+ parts

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141,120

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Cyclops Electronics Ltd (Excess)

UK . 63,000 parts In-Stock

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63,000

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Glotronic Ltd.

UK . 50,400 parts In-Stock

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50,400

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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QUARKTWIN TECHNOLOGY LTD

USA . 13,501 parts In-Stock

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13,501

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Problanco Electronics

Mexico . 8,303 parts In-Stock

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8,303

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SupplyDigital Components

Austria . 5,304 parts In-Stock

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5,304

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-

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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TANS Electronics

Latvia . 2,238 parts In-Stock

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2,238

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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733

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Kulean Microsystems

USA . 728 parts In-Stock

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728

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Overview

Unlock the power of cutting-edge technology with the CPH3205-TL-E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. The NPN configuration and high DC current gain ensure optimal performance, while the small outline package and surface mount capability make installation a breeze. Experience seamless operation and reliable results with this transistor that offers unbeatable value and efficiency. Upgrade your projects today with the CPH3205-TL-E from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, offering versatility.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Optimized for fast switching applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Facilitates compact and space-saving designs.

Terminal Form: GULL WING

Enables easy soldering and ensures secure connections.

No. of Terminals: 3

Simplifies circuit layout and reduces installation complexity.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is limited.

Minimum DC Current Gain (hFE): 200

Ensures high amplification capability.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

Offers high performance and reliability.

Maximum Collector Current (IC): 3 A

Allows for handling moderate current levels.

Terminal Finish: TIN BISMUTH

Provides good conductivity and resistance to corrosion.

Terminal Position: DUAL

Simplifies PCB layout and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable solder joints during assembly.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes.

Nominal Transition Frequency (fT): 380 MHz

Indicates high-speed performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3205-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3205-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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