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CPH3115-TL-H

Onsemi

CPH3115-TL-H by Onsemi

CPH3115-TL-H by Onsemi is a PNP BJT transistor with 200 min hFE and 30V max VCE, ideal for switching applications. It has a max IC of 1.5A and fT of 450MHz, making it suitable for high-frequency operations in small outline packages with gull wing terminals.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 525,000 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.102

10k+ parts

$0.090

525,000

-

$0.122

$0.102

$0.090

DigiKey

USA . 525,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.150

525,000

-

-

-

$0.150

Verical

USA . 318,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.113

318,000

-

-

-

$0.113

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

-

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6,000

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Distributors (In-Stock)

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Digiode

USA . 2,315 parts In-Stock

1+ parts

$0.093

100+ parts

-

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2,315

$0.093

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-

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Vyrian

USA . 1,405 parts In-Stock

1+ parts

$0.098

100+ parts

-

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1,405

$0.098

-

-

-

Bristol Electronics

USA . 2,692 parts In-Stock

1+ parts

$0.487

100+ parts

$0.244

1k+ parts

$0.098

10k+ parts

-

2,692

$0.487

$0.244

$0.098

-

Chip Stock

USA . 50,000 parts In-Stock

1+ parts

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100+ parts

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50,000

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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Dan-Mar Components

USA . 2,692 parts In-Stock

1+ parts

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2,692

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,903 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,903

$0.088

-

-

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Corohmni

South Africa . 87 parts In-Stock

1+ parts

$0.098

100+ parts

-

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87

$0.098

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Component Stockers USA

USA . 408,946 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

408,946

$0.100

$0.090

$0.080

$0.080

Native Components

USA . 639 parts In-Stock

1+ parts

$0.325

100+ parts

-

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10k+ parts

$0.312

639

$0.325

-

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$0.312

Northwest PG Solutions

USA . 615 parts In-Stock

1+ parts

$0.357

100+ parts

-

1k+ parts

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10k+ parts

$0.315

615

$0.357

-

-

$0.315

Continental Prestige Electronics

USA . 525,000 parts In-Stock

1+ parts

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100+ parts

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$0.085

10k+ parts

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525,000

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-

$0.085

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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90,000

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QUARKTWIN TECHNOLOGY LTD

USA . 15,168 parts In-Stock

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15,168

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Microchip USA

USA . 7,744 parts In-Stock

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7,744

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Kepictronics

USA . 5,835 parts In-Stock

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5,835

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TANS Electronics

Latvia . 5,338 parts In-Stock

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5,338

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SupplyDigital Components

Austria . 3,982 parts In-Stock

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3,982

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Problanco Electronics

Mexico . 1,099 parts In-Stock

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1,099

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UHIMA Technologies

Türkiye . 944 parts In-Stock

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944

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Kulean Microsystems

USA . 424 parts In-Stock

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424

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Overview

Discover the power of the CPH3115-TL-H by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. With its PNP polarity and single configuration, this transistor is perfect for switching applications. Manufactured by Onsemi, known for their superior products, this transistor offers a high DC current gain of 200 and a maximum collector-emitter voltage of 30V. Its compact design and gull wing terminals make it easy to integrate into any project. Elevate your electronics with the reliability and efficiency of the CPH3115-TL-H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the transistor, ensuring long-term reliability in various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this transistor versatile and suitable for a wide range of circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use and integrate into existing systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low on-state resistance, making it ideal for efficient power management.

Surface Mount: YES

Surface mount package allows for easy and convenient assembly onto circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used for small outline transistors, providing a compact form factor for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals provide robust solder connections, reducing the risk of mechanical stress and ensuring secure connectivity in harsh operating conditions.

No. of Terminals: 3

3 terminals allow for easy connection in typical transistor circuit configurations, simplifying the design process for engineers.

Package Style (Meter): SMALL OUTLINE

Small outline package style is space-efficient and suitable for compact electronic devices, making this transistor a good choice for small form factor designs.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures consistent and stable amplification in transistor circuits, providing reliable performance in various applications.

Maximum Collector-Emitter Voltage: 30 V

High maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels, increasing the versatility of this transistor.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high thermal conductivity and low energy consumption, making this transistor efficient and reliable.

Maximum Collector Current (IC): 1.5 A

High maximum collector current rating enables this transistor to handle moderate to high power levels, making it suitable for various power control applications.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit layout and allow for easy installation and connection in diverse circuit designs.

Nominal Transition Frequency (fT): 450 MHz

High nominal transition frequency indicates fast response times and efficient signal processing, making this transistor ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3115-TL-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3115-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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