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CPH3105-TL-E

Onsemi

CPH3105-TL-E by Onsemi

CPH3105-TL-E by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 200, and IC of 3A. Ideal for switching applications with a max VCE of 50V and fT of 360MHz. It comes in a small outline package suitable for surface mount assembly.

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3

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1k+

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Chip Stock

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Digiode

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Native Components

USA . 359 parts In-Stock

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Northwest PG Solutions

USA . 301 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kulean Microsystems

USA . 6,110 parts In-Stock

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SupplyDigital Components

Austria . 5,517 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 877 parts In-Stock

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Overview

Upgrade your electronics with the CPH3105-TL-E by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 360MHz, this PNP transistor offers exceptional performance and reliability. Whether you're working on consumer electronics, industrial control systems, or automotive applications, this single configuration transistor will deliver the power and efficiency you need. Trust in Onsemi's reputation for excellence and invest in the CPH3105-TL-E for unparalleled value and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for such purposes.

Configuration: SINGLE

Simplifies circuit design by only requiring one transistor to function, reducing complexity and cost.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in those scenarios.

Surface Mount: YES

Ease of soldering onto PCBs, making it suitable for surface mount technology (SMT) applications.

Terminal Form: GULL WING

Provides better mechanical strength and heat dissipation, improving the overall reliability of the transistor.

Maximum Collector-Emitter Voltage: 50 V

High voltage handling capacity allows for versatility in various circuit designs.

Maximum Collector Current (IC): 3 A

Capable of handling high currents, making it suitable for applications that require a robust current capability.

Nominal Transition Frequency (fT): 360 MHz

High frequency response allows for efficient operation in high-speed switching applications, providing quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3105-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3105-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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