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CPH3115-TL-E

Onsemi

CPH3115-TL-E by Onsemi

CPH3115-TL-E by Onsemi is a PNP BJT for switching applications. Features include hFE of 200, VCE of 30V, and IC of 1.5A. With a fT of 450MHz, it's ideal for high-frequency signal amplification in compact designs.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 97,214 parts In-Stock

1+ parts

-

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$0.174

1k+ parts

$0.144

10k+ parts

$0.129

97,214

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$0.174

$0.144

$0.129

DigiKey

USA . 97,214 parts In-Stock

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$0.220

97,214

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$0.220

Verical

USA . 42,000 parts In-Stock

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$0.161

42,000

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$0.161

Distributors (In-Stock)

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Digiode

USA . 492 parts In-Stock

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$0.142

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492

$0.142

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Vyrian

USA . 1,565 parts In-Stock

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$0.149

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1,565

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Chip Stock

USA . 62,000 parts In-Stock

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62,000

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ACDS - Activité Composants Distribution Service

France . 36,000 parts In-Stock

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36,000

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Corphita

USA . 707 parts In-Stock

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$0.134

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707

$0.134

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Corohmni

South Africa . 481 parts In-Stock

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$0.149

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481

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Native Components

USA . 979 parts In-Stock

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$0.268

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$0.257

979

$0.268

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$0.257

Northwest PG Solutions

USA . 1,109 parts In-Stock

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$0.294

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$0.260

1,109

$0.294

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$0.260

SupplyDigital Components

Austria . 8,089 parts In-Stock

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TANS Electronics

Latvia . 7,113 parts In-Stock

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Problanco Electronics

Mexico . 6,697 parts In-Stock

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Perfect Parts

USA . 6,406 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Kulean Microsystems

USA . 4,980 parts In-Stock

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4,980

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Microchip USA

USA . 488 parts In-Stock

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488

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UHIMA Technologies

Türkiye . 123 parts In-Stock

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123

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Overview

Enhance your electronic designs with the high-quality CPH3115-TL-E from Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Bipolar Junction Transistors like this PNP configuration that is perfect for switching applications. With a maximum collector-emitter voltage of 30V and a nominal transition frequency of 450 MHz, this transistor offers exceptional performance and versatility. Trust Onsemi to provide cutting-edge technology and innovative solutions for all your electronics needs. Upgrade your projects today with the CPH3115-TL-E and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching applications, making this transistor suitable for various switching functions.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making the transistor easy to integrate into different electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in various electronic devices.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and mount the transistor, allowing for efficient use of PCB space.

Terminal Form: GULL WING

The gull wing terminals provide secure and reliable connections, ensuring stable performance in different operating conditions.

No. of Terminals: 3

The 3 terminals offer flexibility in circuit connections and enable different configurations to suit specific application requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes space requirements on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 200

The high DC current gain ensures amplification of input signals with minimal distortion, resulting in accurate and reliable signal processing.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating improves the transistor's ability to handle higher voltage levels, enhancing its versatility in different applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its stability and efficiency, ensuring consistent performance and durability of the transistor.

Maximum Collector Current (IC): 1.5 A

The high collector current rating allows the transistor to handle higher current loads, making it suitable for applications that require high power output.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and enables different connection options to optimize performance in various applications.

Nominal Transition Frequency (fT): 450 MHz

The high transition frequency allows for fast switching speeds and efficient signal processing, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3115-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3115-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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