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CPH3107-TL-E

Onsemi

CPH3107-TL-E by Onsemi

CPH3107-TL-E by Onsemi is a PNP BJT with 6A IC, 200 hFE, and 0.9W power dissipation. Ideal for surface mount applications in electronics, it operates up to 150 °C and withstands peak reflow at 260°C for 30s.

Median Price

$0.310

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 152,000 parts In-Stock

1+ parts

-

100+ parts

$0.323

1k+ parts

$0.268

10k+ parts

$0.239

152,000

-

$0.323

$0.268

$0.239

DigiKey

USA . 152,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.400

10k+ parts

-

152,000

-

-

$0.400

-

Verical

USA . 95,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.298

95,000

-

-

-

$0.298

Farnell

UK . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.203

10

-

-

-

$0.203

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 561 parts In-Stock

1+ parts

$0.203

100+ parts

-

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-

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561

$0.203

-

-

-

Digiode

USA . 2,147 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

10k+ parts

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2,147

$0.263

-

-

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DigiKey Marketplace

USA . 152,000 parts In-Stock

1+ parts

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100+ parts

-

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152,000

-

-

-

-

Chip Stock

USA . 29,000 parts In-Stock

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29,000

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 92 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

-

10k+ parts

-

92

$0.203

-

-

-

Corphita

USA . 2,261 parts In-Stock

1+ parts

$0.249

100+ parts

-

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10k+ parts

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2,261

$0.249

-

-

-

Native Components

USA . 858 parts In-Stock

1+ parts

$1.258

100+ parts

-

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858

$1.258

-

-

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Northwest PG Solutions

USA . 47 parts In-Stock

1+ parts

$1.384

100+ parts

-

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47

$1.384

-

-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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100+ parts

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90,000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,266 parts In-Stock

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26,266

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TANS Electronics

Latvia . 7,478 parts In-Stock

1+ parts

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7,478

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Problanco Electronics

Mexico . 4,607 parts In-Stock

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4,607

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-

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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-

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SupplyDigital Components

Austria . 3,871 parts In-Stock

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3,871

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Kulean Microsystems

USA . 2,575 parts In-Stock

1+ parts

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100+ parts

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2,575

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UHIMA Technologies

Türkiye . 253 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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253

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-

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Continental Prestige Electronics

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.203

10k+ parts

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10

-

-

$0.203

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Overview

Discover the superior quality of the CPH3107-TL-E PNP Bipolar Junction Transistor by Onsemi. With a maximum power dissipation of 0.9W and a minimum DC current gain of 200, this transistor offers reliable performance in various applications. Whether you're designing amplifiers, switches, or oscillators, this surface mount transistor provides excellent functionality and efficiency. Trust in Onsemi's expertise in manufacturing small signal BJTs to deliver exceptional products that meet your needs. Upgrade your electronic projects with the CPH3107-TL-E and experience the value it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in low power applications and are suitable for amplification purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to integrate into electronic circuits.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design, saving space and improving overall product efficiency.

Maximum Power Dissipation (Abs): 0.9 W

High power dissipation allows for reliable performance under varying load conditions without overheating.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures accurate amplification of input signals with minimal distortion.

Maximum Operating Temperature: 150 °C

High operating temperature range enables the transistor to function effectively in a wide range of environments.

Maximum Collector Current (IC): 6 A

High collector current rating allows for handling larger current loads, making it suitable for power applications.

Terminal Finish: TIN BISMUTH

TIN BISMUTH finish provides good solderability and reliable electrical connections for long-term performance.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time helps in minimizing thermal stress on the component during assembly, ensuring reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance makes the transistor suitable for lead-free soldering processes, ensuring compliance with RoHS guidelines.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3107-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

6 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CPH3107-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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