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NSVMMBT5088LT3G

Onsemi

NSVMMBT5088LT3G by Onsemi

NSVMMBT5088LT3G by Onsemi is a NPN BJT with hFE of 300, VCE of 30V, and fT of 50MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and IC of 0.05A.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,975 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.054

10k+ parts

$0.048

9,975

-

$0.065

$0.054

$0.048

Verical

USA . 9,975 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

9,975

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-

-

$0.060

Distributors (In-Stock)

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Digiode

USA . 615 parts In-Stock

1+ parts

$0.050

100+ parts

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615

$0.050

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Chip Stock

USA . 55,000 parts In-Stock

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55,000

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Vyrian

USA . 4,995 parts In-Stock

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4,995

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Distributors (Availability)

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Corphita

USA . 1,959 parts In-Stock

1+ parts

$0.048

100+ parts

-

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1,959

$0.048

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-

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Corohmni

South Africa . 279 parts In-Stock

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$0.053

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279

$0.053

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AZTECH Wire

Italy . 136 parts In-Stock

1+ parts

$22.020

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136

$22.020

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TANS Electronics

Latvia . 8,275 parts In-Stock

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8,275

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Kulean Microsystems

USA . 3,822 parts In-Stock

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3,822

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SupplyDigital Components

Austria . 1,282 parts In-Stock

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Problanco Electronics

Mexico . 1,045 parts In-Stock

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1,045

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UHIMA Technologies

Türkiye . 478 parts In-Stock

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478

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Overview

Enhance your electronic projects with the NSVMMBT5088LT3G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers exceptional performance and reliability in various applications. With a minimum DC current gain of 300 and a maximum collector-emitter voltage of 30V, this transistor is ideal for amplification and switching tasks. Its matte tin terminal finish and dual position terminals make it easy to integrate into your designs. Trust Onsemi for high-quality components that deliver value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy package body material provides durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and compatibility with common electronic components.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation.

Surface Mount: YES

Surface mount capability enables easy installation on circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape facilitates efficient placement and soldering on PCBs.

Terminal Form: GULL WING

Gull wing terminal form allows for secure and reliable connections during assembly.

No. of Terminals: 3

3 terminals provide necessary connections for operation while keeping the package size compact.

Package Style (Meter): SMALL OUTLINE

Small outline package style further enhances space-saving potential for compact electronic devices.

Minimum DC Current Gain (hFE): 300

High minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, the transistor can handle a wide range of voltage levels in applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance and reliability for various electronic applications.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, the transistor is suitable for low-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance for long-lasting connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds maximum time at peak reflow temperature ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures reliable solder joints and overall product quality.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive electronic applications.

Nominal Transition Frequency (fT): 50 MHz

High nominal transition frequency of 50MHz allows for fast and efficient signal amplification and switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMMBT5088LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSVMMBT5088LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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