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NSVMUN5113DW1T3G

Onsemi

NSVMUN5113DW1T3G by Onsemi

NSVMUN5113DW1T3G by Onsemi is a PNP BJT with 2 elements, hFE of 80. It has 0.1A IC, 0.385W power dissipation, and matte tin finish. Ideal for small signal applications in electronics due to its silicon material and surface mount capability.

Median Price

$0.169

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 110,000 parts In-Stock

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Bristol Electronics

USA . 4,073 parts In-Stock

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$0.169

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$0.084

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$0.034

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$0.025

4,073

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$0.084

$0.034

$0.025

Flip Electronics

USA . 110,000 parts In-Stock

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Chip Stock

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Dan-Mar Components

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Vyrian

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Digiode

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AZTECH Wire

Italy . 219 parts In-Stock

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$21.410

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Kulean Microsystems

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Problanco Electronics

Mexico . 5,387 parts In-Stock

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SupplyDigital Components

Austria . 5,190 parts In-Stock

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TANS Electronics

Latvia . 3,097 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 818 parts In-Stock

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Corohmni

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Overview

Enhance your electronic designs with the NSVMUN5113DW1T3G by Onsemi, a high-quality PNP small signal bipolar junction transistor. Manufactured by Onsemi, this surface-mount transistor offers two elements, a minimum DC current gain of 80, and a maximum collector current of 0.1 A, making it ideal for a wide range of applications. Whether you're looking to amplify signals or control currents, this transistor provides value, reliability, and performance that will exceed your expectations. Upgrade your projects with the NSVMUN5113DW1T3G and experience the benefits of superior quality and precision engineering from Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in high-side switching circuits and complementary symmetry amplifiers, making this product suitable for a variety of applications.

Surface Mount: YES

Surface mount packaging allows for easy and efficient assembly on PCBs, saving space and reducing overall manufacturing costs.

No. of Elements: 2

Having two elements in one package provides convenience and flexibility for circuit design, making it ideal for applications where multiple transistors are needed.

Maximum Power Dissipation (Abs): 0.385 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating, ensuring reliability in demanding applications.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and stable amplification of signals, making this transistor suitable for use in various amplifier circuits.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance characteristics such as high gain, low leakage, and high switching speed, making them a popular choice in electronic devices.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for low to medium power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and resistance to corrosion, ensuring reliable connections and longevity in various operating environments.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature of 30 seconds helps prevent thermal stress on the component during the soldering process, ensuring its long-term reliability.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, making it compatible with lead-free assembly techniques.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMUN5113DW1T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NSVMUN5113DW1T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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