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STMicroelectronics Flash Memory 76

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M28W320CT90N6 by STMicroelectronics

M28W320CT90N6

STMicroelectronics

M28W320CT90N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 90 ns access time, operating b/w -40 °C to 85°C. It features an asynchronous mode and supports dual terminal positioning for efficient surface mounting. Ideal for industrial applications requiring reliable data storage.

90 ns

TOP BOOT BLOCK

TOP

YES

YES

NO

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3,3/3.3

3

Not Qualified

1.2 mm

4K,32K

.000005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29F010B45K1 by STMicroelectronics

M29F010B45K1

STMicroelectronics

M29F010B45K1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports up to 100,000 write/erase cycles and operates in commercial temperature ranges. Ideal for embedded applications, it comes in a compact chip carrier package with 32 terminals.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F010B70K6T by STMicroelectronics

M29F010B70K6T

STMicroelectronics

M29F010B70K6T from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F010B70N1 by STMicroelectronics

M29F010B70N1

STMicroelectronics

M29F010B70N1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles and comes in a compact SOIC package. Ideal for embedded applications requiring reliable data storage.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B55N1 by STMicroelectronics

M29W040B55N1

STMicroelectronics

M29W040B55N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and 55 ns max access time. It supports up to 100K write/erase cycles, ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in designs.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B70N1 by STMicroelectronics

M29W040B70N1

STMicroelectronics

M29W040B70N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W040B90K1 by STMicroelectronics

M29W040B90K1

STMicroelectronics

M29W040B90K1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles and operates in temperatures from 0 °C to 70 °C. Ideal for embedded applications, it offers reliable data storage in compact designs.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90K6 by STMicroelectronics

M29W040B90K6

STMicroelectronics

M29W040B90K6 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports industrial applications with a temp range of -40 °C to 85 °C and offers 100k write/erase cycles. Ideal for embedded systems, it comes in a compact chip carrier package with quad terminals.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90N1 by STMicroelectronics

M29W040B90N1

STMicroelectronics

M29W040B90N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W200BB55N1 by STMicroelectronics

M29W200BB55N1

STMicroelectronics

M29W200BB55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and support for data polling, it ensures reliable performance in various electronic devices.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N1 by STMicroelectronics

M29W200BB70N1

STMicroelectronics

M29W200BB70N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and data polling capabilities, it ensures reliable performance in commercial environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N6 by STMicroelectronics

M29W200BB70N6

STMicroelectronics

M29W200BB70N6 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers high endurance of 100K write/erase cycles. Its compact SOIC package ensures efficient surface mounting for space-constrained designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BT55N1 by STMicroelectronics

M29W200BT55N1

STMicroelectronics

M29W200BT55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for space-constrained applications. This device operates asynchronously, ensuring efficient data handling in embedded systems.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F040B70K1 by STMicroelectronics

M29F040B70K1

STMicroelectronics

M29F040B70K1 from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for asynchronous applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. This compact chip carrier is perfect for embedded systems requiring reliable data storage.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F400BB70N3T by STMicroelectronics

M29F400BB70N3T

STMicroelectronics

M29F400BB70N3T from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for automotive applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M50FW040N1 by STMicroelectronics

M50FW040N1

STMicroelectronics

STMicroelectronics M50FW040N1 is a 512Kx8 NOR Flash Memory with 3.3V supply, operating at 0-70 °C. It features synchronous operation, parallel interface, and GULL WING terminals. Ideal for applications requiring fast access times and high memory density in compact designs.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M29W400BT55ZA1 by STMicroelectronics

M29W400BT55ZA1

STMicroelectronics

STMicroelectronics M29W400BT55ZA1 is a 256Kx16 NOR Flash Memory with 3.3V supply, operating at -40 to 85 °C. It features 100000 Write/Erase cycles, 55ns access time, and supports asynchronous mode. Ideal for applications requiring high-speed data storage in compact devices.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PBGA-B48

e1

9 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

M50FW080N1 by STMicroelectronics

M50FW080N1

STMicroelectronics

STMicroelectronics M50FW080N1 is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at up to 70 °C. It is suitable for commercial applications requiring fast access times (11ns) and low standby current (0.0001A), with a compact rectangular package design for surface mounting.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M50FW080N5 by STMicroelectronics

M50FW080N5

STMicroelectronics

M50FW080N5 by STMicroelectronics is a 3.3V NOR Flash Memory with 1MX8 organization, 16 sectors of 64K words each, and operates synchronously at a max temperature of 85 °C. It is ideal for applications requiring fast access times, such as embedded systems and consumer electronics.

11 ns

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

M29F002BB70K6E by STMicroelectronics

M29F002BB70K6E

STMicroelectronics

M29F002BB70K6E from STMicroelectronics is a NOR flash memory with a 5V supply, featuring 256K x 8 organization and an industrial temperature range of -40 °C to 85 °C. It supports asynchronous operation and offers up to 100,000 write/erase cycles. Ideal for embedded applications requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

2097152 bit

FLASH

8

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F002BT70K6E by STMicroelectronics

M29F002BT70K6E

STMicroelectronics

STMicroelectronics M29F002BT70K6E is a 256Kx8 NOR Flash Memory with 262144 words, offering 100000 Write/Erase Cycles. Operating at -40 to 85 °C, it has a supply voltage of 4.5-5.5V and supports asynchronous mode. Ideal for industrial applications requiring fast access time and high endurance.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

2097152 bit

FLASH

8

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F200BB70M6E by STMicroelectronics

M29F200BB70M6E

STMicroelectronics

M29F200BB70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with a temp range of -40 °C to 85°C and offers 100K write/erase cycles. This compact SOIC package ensures efficient data storage in embedded systems.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

2097152 bit

FLASH

16

1

1,2,1,3

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

M29F200BT70M6E by STMicroelectronics

M29F200BT70M6E

STMicroelectronics

M29F200BT70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in an industrial temp range (-40 °C to 85°C). Ideal for embedded applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

2097152 bit

FLASH

16

1

1,2,1,3

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

PSD813F1VA-15J by STMicroelectronics

PSD813F1VA-15J

STMicroelectronics

PSD813F1VA-15J by STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode and a max access time of 15 ns. It operates at a nominal voltage of 3.3V, suitable for commercial applications. This compact chip carrier design ensures efficient performance in various electronic devices.

15 ns

S-PQCC-J52

19.1 mm

1048576 bit

FLASH

8

1

52

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL

3.3

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOR TYPE

19 mm

10 ms

PSD813F1VA-15M by STMicroelectronics

PSD813F1VA-15M

STMicroelectronics

PSD813F1VA-15M from STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode and a max access time of 15 ns. It operates at a nominal voltage of 3.3V, suitable for low-profile applications. Ideal for embedded systems, it features a compact flatpack design with 52 terminals.

15 ns

S-PQFP-G52

14 mm

1048576 bit

FLASH

8

1

52

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

LQFP

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

3.3

Not Qualified

1.54 mm

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

QUAD

NOR TYPE

14 mm

10 ms

PSD813F1VA-20UI by STMicroelectronics

PSD813F1VA-20UI

STMicroelectronics

PSD813F1VA-20UI by STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode, ideal for industrial applications. It operates at 3.0-3.6V and withstands temperatures from -40 °C to 85 °C. With a max access time of 20ns, it ensures efficient data retrieval.

20 ns

S-PQCC-J52

19.1 mm

1048576 bit

FLASH

8

1

52

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL

3.3

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

NOR TYPE

19 mm

10 ms

M29F016D70N6 by STMicroelectronics

M29F016D70N6

STMicroelectronics

M29F016D70N6 from STMicroelectronics is a 2M x 8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features a max access time of 70 ns and operates in asynchronous mode. With a temp range of -40 °C to 85°C, it's perfect for harsh environments.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

16777216 bit

FLASH

8

1

32

40

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

M29F080D70N6 by STMicroelectronics

M29F080D70N6

STMicroelectronics

M29F080D70N6 from STMicroelectronics is a NOR flash memory with 1M x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85°C, making it ideal for industrial applications. Its compact SOIC package ensures efficient surface mounting.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

M29F800DB55N1 by STMicroelectronics

M29F800DB55N1

STMicroelectronics

M29F800DB55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB55N6 by STMicroelectronics

M29F800DB55N6

STMicroelectronics

M29F800DB55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N1 by STMicroelectronics

M29F800DB70N1

STMicroelectronics

M29F800DB70N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and a max access time of 70ns. It features an asynchronous operation mode, dual terminal position, and is ideal for embedded applications requiring reliable data storage. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N6 by STMicroelectronics

M29F800DB70N6

STMicroelectronics

M29F800DB70N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N1 by STMicroelectronics

M29F800DT55N1

STMicroelectronics

M29F800DT55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N6 by STMicroelectronics

M29F800DT55N6

STMicroelectronics

M29F800DT55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal configuration in a thin SO package, suitable for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in diverse environments.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70N1 by STMicroelectronics

M29F800DT70N1

STMicroelectronics

M29F800DT70N1 from STMicroelectronics is a 5V NOR flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates asynchronously, and supports data polling. Ideal for embedded applications requiring reliable storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M58LW032D110N6 by STMicroelectronics

M58LW032D110N6

STMicroelectronics

M58LW032D110N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 110 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports dual terminal positioning. Ideal for industrial applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

33554432 bit

FLASH

16

1

32

56

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

NOT SPECIFIED

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

14 mm

M58LW032D110ZA6 by STMicroelectronics

M58LW032D110ZA6

STMicroelectronics

M58LW032D110ZA6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V nominal supply, featuring asynchronous operation and a max access time of 110 ns. It operates in industrial temperatures (-40 °C to 85 °C) and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

M29F800DB70M6E by STMicroelectronics

M29F800DB70M6E

STMicroelectronics

STMicroelectronics M29F800DB70M6E is a 512Kx16 NOR flash memory with 85°C max temp, 70ns access time, and 5V programming voltage. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact small outline package.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G44

e3/e4

28.2 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.8 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F800DB70N6E by STMicroelectronics

M29F800DB70N6E

STMicroelectronics

M29F800DB70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and supports asynchronous mode for industrial applications. Ideal for embedded systems requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70M6E by STMicroelectronics

M29F800DT70M6E

STMicroelectronics

M29F800DT70M6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design, operates in asynchronous mode, and supports industrial temperature ranges (-40 °C to 85°C). Ideal for embedded applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G44

e3/e4

28.2 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.8 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F800DT70N6E by STMicroelectronics

M29F800DT70N6E

STMicroelectronics

M29F800DT70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and is ideal for industrial applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M50FLW040AK5G by STMicroelectronics

M50FLW040AK5G

STMicroelectronics

M50FLW040AK5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring fast data storage and retrieval.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW040AN5G by STMicroelectronics

M50FLW040AN5G

STMicroelectronics

M50FLW040AN5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin SO package, ideal for compact applications. With 512Kx8 organization, it's perfect for embedded systems requiring reliable data storage.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW040BN5G by STMicroelectronics

M50FLW040BN5G

STMicroelectronics

M50FLW040BN5G from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin profile SO package, ideal for compact applications. With -20 °C to 85 °C temp range, it's perfect for various electronic devices.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

4194304 bit

FLASH

8

1

8

40

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

YES

1.2 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080AK5G by STMicroelectronics

M50FLW080AK5G

STMicroelectronics

M50FLW080AK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features fast access times of 11 ns, operates b/w -20 °C to 85 °C, and is ideal for embedded applications. Its compact chip carrier design ensures efficient surface mounting in various electronic devices.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080AN5G by STMicroelectronics

M50FLW080AN5G

STMicroelectronics

M50FLW080AN5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a 3.3V supply, ideal for high-speed applications. It features an access time of 11 ns and operates in a temperature range of -20 °C to 85 °C. This compact, surface-mount device is perfect for embedded systems requiring reliable data storage.

11 ns

YES

NO

R-PDSO-G40

18.4 mm

8388608 bit

FLASH

8

1

48,13

40

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

10 mm

M50FLW080ANB5G by STMicroelectronics

M50FLW080ANB5G

STMicroelectronics

M50FLW080ANB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

11 ns

YES

NO

R-PDSO-G32

e3/e6

12.4 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

3

Not Qualified

1.2 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

8 mm

M50FLW080BK5G by STMicroelectronics

M50FLW080BK5G

STMicroelectronics

M50FLW080BK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.3V, features a quad terminal position, and supports applications in embedded systems. With a temp range of -20 °C to 85 °C, it's ideal for reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm