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M29W200BB55N1

STMicroelectronics

M29W200BB55N1 by STMicroelectronics

M29W200BB55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and support for data polling, it ensures reliable performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,471 parts In-Stock

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3,471

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Digiode

USA . 2,661 parts In-Stock

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2,661

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Anansix

USA . 2,042 parts In-Stock

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2,042

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Mil-Aero Solutions, Inc.

USA . 8 parts In-Stock

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8

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 160 parts In-Stock

1+ parts

$2.846

100+ parts

-

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$2.562

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160

$2.846

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$2.562

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MKK Technologies

India . 1,116 parts In-Stock

1+ parts

$5.353

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1,116

$5.353

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DigiPath Technology Company

USA . 1,116 parts In-Stock

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$5.353

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1,116

$5.353

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AZTECH Wire

Italy . 77 parts In-Stock

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$9.140

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77

$9.140

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QUARKTWIN TECHNOLOGY LTD

USA . 14,892 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Microchip USA

USA . 2,688 parts In-Stock

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2,688

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Parana Technologies

USA . 2,197 parts In-Stock

1+ parts

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$3.403

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2,197

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$3.403

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Corphita

USA . 1,460 parts In-Stock

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1,460

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Overview

Elevate your designs with the M29W200BB55N1 Flash Memory from STMicroelectronics—a trusted name in innovation. This high-performance memory solution offers remarkable reliability and efficiency, perfect for a wide range of applications like automotive, industrial, and consumer electronics. Enjoy seamless integration with its compact, thin-profile design, while benefiting from low power consumption and fast access times, ensuring your projects stay cutting-edge and competitive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material offers good protection and resilience, ensuring reliability in various environments.

Surface Mount: YES

Surface mount technology ensures efficient use of space and ease of installation on PCBs.

Package Shape: RECTANGULAR

The rectangular package shape maximizes space efficiency on circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler design and reduced complexity in interfacing.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal supply voltage of 3.3 V is standard for many applications, allowing compatibility with common systems.

Power Supplies (V): 3.3 V

Compatible power supply with 3.3 V ensures low power consumption while maintaining performance.

No. of Terminals: 48

The 48 terminals provide adequate connections for a robust interface with PCB.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile make it ideal for compact electronic designs.

Alternate Memory Width: 8

An 8-bit memory width caters to applications requiring moderate data width, balancing performance and resource usage.

Maximum Operating Temperature: 70 °C

The ability to operate up to 70 °C ensures reliability in higher temperature environments.

Organization: 128KX16

The 128Kx16 organization allows for efficient data management and storage suited for various applications.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C offers flexibility for use in a wide range of conditions.

No. of Sectors/Size: 1,2,1,3

Multiple sectors enhance performance and data management capabilities for different applications.

Terminal Finish: TIN LEAD

Tin-lead finish ensures good solderability and longevity of the connections.

Terminal Position: DUAL

Dual terminal positions enhance board layout flexibility and signal integrity.

Maximum Seated Height: 1.2 mm

A low seated height contributes to better form factor and integration in compact devices.

Width: 12 mm

12 mm width allows for compatible integration into compact designs.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3 V allows for greater flexibility in power supply options.

Type: NOR TYPE

NOR type flash allows for seamless random access to stored data, enhancing performance.

Length: 20 mm

A 20 mm length fits well in standard PCB layouts facilitating easy mounting.

Programming Voltage (V): 3

A programming voltage of 3 V aids in compatibility with lower power logic families.

Temperature Grade: COMMERCIAL

Commercial temperature grade signifies the product is suitable for standard consumer applications.

Technology: CMOS

Using CMOS technology enhances performance while reducing power consumption.

Parallel or Serial: PARALLEL

Parallel data processing allows for faster data transfer rates, suitable for high-speed applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent reliability and minimize solder joint stress.

Sector Size (Words): 16K, 8K, 32K, 64K

Variable sector sizes allow for flexible memory management and efficient use of storage.

Maximum Supply Current: 20 mA

A maximum current of 20 mA ensures efficient power consumption during operation.

No. of Words: 131072 words

A capacity of 131072 words supports a broad range of applications from small projects to larger systems.

Toggle Bit: YES

The presence of a toggle bit facilitates diagnostic capabilities and enhances user control.

Memory Width: 16

The 16-bit memory width strikes a balance between data handling capacity and resources.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm conserves board space while ensuring a reliable connection.

No. of Words Code: 128K

Support for 128K words indicates substantial storage for many embedded applications.

Command User Interface: YES

A user-friendly command interface simplifies programming and operation.

Ready or Busy: YES

The ready or busy signal feature provides clear communication about the device’s status.

Maximum Supply Voltage (Vsup): 3.6 V

Capable of handling a maximum supply voltage of 3.6 V enhances flexibility in application designs.

Endurance: 100000 Write/Erase Cycles

With an endurance of 100,000 cycles, this flash memory is well-suited for applications requiring frequent updates.

Boot Block: BOTTOM

Having a bottom boot block allows for easier programming and firmware management.

Memory Density: 2097152 bit

A memory density of 2,097,152 bits highlights its capability to store substantial amounts of data.

Memory IC Type: FLASH

Flash IC type ensures non-volatile memory retention, making it ideal for data storage applications.

Maximum Standby Current: 0.0001 Amp

Low standby current optimizes power efficiency, making it suitable for battery-powered devices.

Maximum Access Time: 55 ns

A maximum access time of 55 ns enables quick data retrieval, enhancing device performance.

Data Polling: YES

The data polling feature enhances data integrity checks during read and write operations.

Technical Specifications

Flash Memory M29W200BB55N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29W200BB55N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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