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M29W256GL70N6E

Micron Technology

M29W256GL70N6E by Micron Technology

Micron Technology's M29W256GL70N6E is a 16Mx16 NOR flash memory with 256 sectors, operating at 3V. It features an industrial temperature grade, parallel interface, and 70ns access time. Ideal for applications requiring fast data access in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Vyrian

USA . 1,342 parts In-Stock

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1,342

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Digiode

USA . 790 parts In-Stock

1+ parts

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790

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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100

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BCID Electronics Ltd.

Israel . 44 parts In-Stock

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44

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$5.375

100+ parts

$4.891

1k+ parts

$4.408

10k+ parts

-

350

$5.375

$4.891

$4.408

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Andel Nordic

Denmark . 2,685 parts In-Stock

1+ parts

$10.500

100+ parts

-

1k+ parts

$10.080

10k+ parts

$10.080

2,685

$10.500

-

$10.080

$10.080

Ampacity Inc.

Singapore . 1,080 parts In-Stock

1+ parts

$17.000

100+ parts

-

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10k+ parts

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1,080

$17.000

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-

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AZTECH Wire

Italy . 537 parts In-Stock

1+ parts

$18.262

100+ parts

-

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10k+ parts

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537

$18.262

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Kepictronics

USA . 38,400 parts In-Stock

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38,400

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RC Electronics

USA . 36,127 parts In-Stock

1+ parts

-

100+ parts

$1.440

1k+ parts

$1.310

10k+ parts

$1.270

36,127

-

$1.440

$1.310

$1.270

A-Z Elektronik GmbH

Germany . 12,820 parts In-Stock

1+ parts

-

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12,820

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Alle Elektronik GmbH

Germany . 8,546 parts In-Stock

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8,546

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Perfect Parts

USA . 6,153 parts In-Stock

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6,153

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Continental Prestige Electronics

USA . 4,039 parts In-Stock

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4,039

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Argo Parts USA

USA . 3,713 parts In-Stock

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3,713

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S.R.D Solutions

India . 3,000 parts In-Stock

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3,000

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Corphita

USA . 1,685 parts In-Stock

1+ parts

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1,685

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GreenTree Electronics

Israel . 1,472 parts In-Stock

1+ parts

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1,472

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Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

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500

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Microchip USA

USA . 302 parts In-Stock

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302

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Overview

Upgrade your devices with the powerful M29W256GL70N6E by Micron Technology. This high-quality flash memory solution offers unmatched reliability and performance, perfect for a wide range of applications. With its advanced technology and industrial-grade design, this product ensures seamless operation even in the most demanding environments. Experience faster data access, lower power consumption, and increased storage capacity with the M29W256GL70N6E. Embrace innovation and elevate your experience with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible access to data and commands, enhancing overall performance and versatility.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of devices and power sources.

No. of Terminals: 56

Having 56 terminals provides ample connectivity options and potential for expansion, enabling versatility in system design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact and efficient design layouts.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade applications, ensuring reliability and performance under harsh environmental conditions.

Memory IC Type: FLASH

Utilizing flash memory technology offers fast read/write speeds, high reliability, and low power consumption, making it suitable for a wide range of applications.

Technical Specifications

Flash Memory M29W256GL70N6E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

256

No. of Terminals:

56

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Maximum Write Cycle Time (tWC):

.00007 ms

Trade Compliance

M29W256GL70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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