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MT29F2G08ABAEAWP-IT:E

Micron Technology

MT29F2G08ABAEAWP-IT:E by Micron Technology

Micron Technology's MT29F2G08ABAEAWP-IT:E is a 256MX8 SLC NAND Flash Memory with 2K sectors and 100,000 Write/Erase cycles. Operating at 3.3V, it offers industrial-grade reliability for applications requiring high endurance and fast data access. With a compact form factor of 18.4mm x 12mm and low standby current of 0.0001A, it is ideal for embedded systems in harsh environments.

Median Price

$3.683

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,273 parts In-Stock

1+ parts

$3.550

100+ parts

$2.980

1k+ parts

$2.840

10k+ parts

-

6,273

$3.550

$2.980

$2.840

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Arrow

USA . 958 parts In-Stock

1+ parts

$3.683

100+ parts

$2.874

1k+ parts

$2.755

10k+ parts

-

958

$3.683

$2.874

$2.755

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Farnell

UK . 1,379 parts In-Stock

1+ parts

$5.052

100+ parts

$3.227

1k+ parts

$3.111

10k+ parts

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1,379

$5.052

$3.227

$3.111

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Newark

USA . 960 parts In-Stock

1+ parts

$9.810

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960

$9.810

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Element14

Singapore . 696 parts In-Stock

1+ parts

$17.140

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696

$17.140

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Future Electronics

Canada . 5,760 parts In-Stock

1+ parts

-

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$2.000

1k+ parts

$1.950

10k+ parts

$1.920

5,760

-

$2.000

$1.950

$1.920

Verical

USA . 4,808 parts In-Stock

1+ parts

-

100+ parts

$2.762

1k+ parts

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10k+ parts

$2.724

4,808

-

$2.762

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$2.724

EBV Elektronik

Germany . 4,800 parts In-Stock

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4,800

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Distributors (In-Stock)

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Digiode

USA . 1,802 parts In-Stock

1+ parts

$2.888

100+ parts

-

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1,802

$2.888

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Nova Conductors

Japan . 67 parts In-Stock

1+ parts

$3.698

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67

$3.698

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IBS Electronics

USA . 6,274 parts In-Stock

1+ parts

$15.759

100+ parts

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1k+ parts

$5.764

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6,274

$15.759

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$5.764

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Cyclops Electronics Ltd

UK . 30,012 parts In-Stock

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30,012

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Chip Stock

USA . 18,300 parts In-Stock

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18,300

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NAC Semi

USA . 12,480 parts In-Stock

1+ parts

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$2.620

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12,480

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$2.620

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Avant Electronics Limited

UK . 2,348 parts In-Stock

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2,348

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Component Sense

UK . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 1,446 parts In-Stock

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1,446

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Connector Distribution Corp

USA . 342 parts In-Stock

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342

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Right Parts Inc.

USA . 342 parts In-Stock

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342

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North Shore Components

USA . 234 parts In-Stock

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234

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ComSIT Distribution GmbH

Germany . 187 parts In-Stock

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187

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ComSIT USA

USA . 187 parts In-Stock

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187

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ACDS - Activité Composants Distribution Service

France . 150 parts In-Stock

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150

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Holdelec - ElecDif-Pro

France . 150 parts In-Stock

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150

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LWI Electronics Inc

India . 131 parts In-Stock

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131

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Inventory MP

USA . 100 parts In-Stock

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100

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PC Components Company LLC

USA . 100 parts In-Stock

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100

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Bristol Electronics

USA . 100 parts In-Stock

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100

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Vectronix, Inc

USA . 92 parts In-Stock

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92

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Martec Srl

Italy . 66 parts In-Stock

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66

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LIBRA Elektronik GmbH

Germany . 27 parts In-Stock

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27

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A&K Electronics

USA . 12 parts In-Stock

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12

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Rotakorn

Sweden . 12 parts In-Stock

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12

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Goldney Electronics S.L.

Spain . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 6,026 parts In-Stock

1+ parts

$1.790

100+ parts

$1.745

1k+ parts

$1.736

10k+ parts

-

6,026

$1.790

$1.745

$1.736

-

Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$2.168

100+ parts

$2.060

1k+ parts

$2.060

10k+ parts

-

870

$2.168

$2.060

$2.060

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Corphita

USA . 413 parts In-Stock

1+ parts

$2.736

100+ parts

-

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-

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413

$2.736

-

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Argo Parts USA

USA . 1,899 parts In-Stock

1+ parts

$3.220

100+ parts

-

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1,899

$3.220

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$3.698

100+ parts

-

1k+ parts

$3.513

10k+ parts

$3.439

1,000

$3.698

-

$3.513

$3.439

Continental Prestige Electronics

USA . 1,568 parts In-Stock

1+ parts

$3.920

100+ parts

$2.770

1k+ parts

-

10k+ parts

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1,568

$3.920

$2.770

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Aztec Data Supply Inc.

USA . 1,533 parts In-Stock

1+ parts

$4.789

100+ parts

-

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1,533

$4.789

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Perfect Parts

USA . 74,739 parts In-Stock

1+ parts

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74,739

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S.R.D Solutions

India . 30,000 parts In-Stock

1+ parts

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30,000

-

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Epart123

USA . 20,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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$2.880

20,000

-

-

-

$2.880

A-Z Elektronik GmbH

Germany . 16,201 parts In-Stock

1+ parts

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16,201

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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10,000

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RC Electronics

USA . 7,645 parts In-Stock

1+ parts

-

100+ parts

$3.880

1k+ parts

$3.540

10k+ parts

$3.430

7,645

-

$3.880

$3.540

$3.430

Futuretech Components

Singapore . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

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Source4Electronics, LLC

USA . 5,264 parts In-Stock

1+ parts

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5,264

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Infinite Electronics LLP (Excess)

. 1,616 parts In-Stock

1+ parts

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1,616

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Corohmni

South Africa . 472 parts In-Stock

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472

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Overview

Experience unparalleled data storage capabilities with the MT29F2G08ABAEAWP-IT:E by Micron Technology. As a leading manufacturer in the industry, Micron's flash memory offers reliability, efficiency, and high performance. Ideal for industrial applications, this SLC NAND type memory provides 256M words of memory width, ensuring fast and seamless data access. With a maximum endurance of 100,000 write/erase cycles, this compact and durable product guarantees long-lasting value for all your storage needs. Upgrade to Micron Technology and elevate your storage solutions today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material choice makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

The ability to surface mount this product makes it easy to integrate into circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a PCB, making it suitable for compact designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent read and write operations, increasing flexibility and performance.

Nominal Supply Voltage (Vsup): 3.3V

The 3.3V supply voltage is common in many applications, making it compatible with a wide range of devices.

Power Supplies: 3/3.3V

The dual power supply option provides flexibility in design and compatibility with different voltage requirements.

No. of Terminals: 48

The 48 terminals offer ample connectivity options for interfacing with other components in the system.

Package Style: SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design save space and make the product suitable for slim devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range ensures reliability in various environmental conditions.

Organization: 256MX8

The 256MX8 organization allows for efficient data storage and access, enhancing performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range ensures the product can function in cold environments without issues.

No. of Sectors/Size: 2K

The 2K sector size offers efficient data organization and management, improving the overall storage capabilities.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good solderability and corrosion resistance, ensuring a reliable connection.

Terminal Position: DUAL

The dual terminal position allows for flexibility in board layout and connection options.

Maximum Seated Height: 1.2 mm

The low seated height makes the product suitable for slim and compact devices.

Width: 12 mm

The 12mm width offers a compact form factor, ideal for space-constrained applications.

Technical Specifications

Flash Memory MT29F2G08ABAEAWP-IT:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Command User Interface:

YES

Data Polling:

NO

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

2K

No. of Terminals:

48

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F2G08ABAEAWP-IT:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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