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MT29F1G08ABADAWP-ITX:DTR

Micron Technology

MT29F1G08ABADAWP-ITX:DTR by Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,165 parts In-Stock

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Digiode

USA . 300 parts In-Stock

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300

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Nova Conductors

Japan . 95 parts In-Stock

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95

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Distributors (Availability)

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AZTECH Wire

Italy . 232 parts In-Stock

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$5.609

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232

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Semicontronic

India . 767 parts In-Stock

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$8.000

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$7.800

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$7.760

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767

$8.000

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$7.760

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Ampacity Inc.

Singapore . 433 parts In-Stock

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$16.000

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433

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Perfect Parts

USA . 42,560 parts In-Stock

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Continental Prestige Electronics

USA . 6,459 parts In-Stock

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Argo Parts USA

USA . 2,348 parts In-Stock

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Corohmni

South Africa . 392 parts In-Stock

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Microchip USA

USA . 144 parts In-Stock

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Corphita

USA . 95 parts In-Stock

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95

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of Micron Technology's MT29F1G08ABADAWP-ITX:DTR Flash Memory. This cutting-edge product is designed to meet the demands of industrial applications, offering seamless performance in extreme temperatures and conditions. With a compact design and advanced CMOS technology, this Flash Memory provides customers with fast and efficient data storage solutions. Trust Micron Technology to deliver superior products that exceed expectations and provide unmatched value for your business needs. Elevate your operations with the MT29F1G08ABADAWP-ITX:DTR Flash Memory today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material in the package body makes the product lightweight and durable.

Nominal Supply Voltage / Vsup (V): 3.3

With a stable supply voltage of 3.3V, the product ensures reliable performance and energy efficiency.

Organization: 128MX8

The organization of 128MX8 allows for efficient data storage and retrieval in the flash memory.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures that the product can withstand harsh environmental conditions.

Technology: CMOS

Utilizing CMOS technology makes the product power-efficient, reliable, and cost-effective.

Memory Density: 1073741824 bit

With a high memory density of 1073741824 bits, the product offers ample storage capacity for data-intensive applications.

Technical Specifications

Flash Memory MT29F1G08ABADAWP-ITX:DTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F1G08ABADAWP-ITX:DTR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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