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MT29F2G08ABAEAWP-IT:ETR

Micron Technology

MT29F2G08ABAEAWP-IT:ETR by Micron Technology

Micron Technology's MT29F2G08ABAEAWP-IT:ETR is a 256MX8 SLC NAND flash memory with 2K sectors and 100,000 write/erase cycles. Operating at 3.3V, it offers industrial-grade temperature range (-40 to 85°C) for applications requiring high endurance and reliability in small outline packages.

Median Price

$2.824

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,826 parts In-Stock

1+ parts

$6.580

100+ parts

-

1k+ parts

-

10k+ parts

-

1,826

$6.580

-

-

-

Future Electronics

Canada . 19,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.920

10k+ parts

-

19,000

-

-

$1.920

-

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.824

10k+ parts

$2.685

1,000

-

-

$2.824

$2.685

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$3.423

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$3.423

-

-

-

Digiode

USA . 1,336 parts In-Stock

1+ parts

$3.734

100+ parts

-

1k+ parts

-

10k+ parts

-

1,336

$3.734

-

-

-

IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

$8.695

100+ parts

-

1k+ parts

-

10k+ parts

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6,000

$8.695

-

-

-

Chip Stock

USA . 11,080 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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11,080

-

-

-

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.370

10k+ parts

$3.110

4,000

-

-

$3.370

$3.110

Vyrian

USA . 3,352 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,352

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-

-

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Bristol Electronics

USA . 400 parts In-Stock

1+ parts

-

100+ parts

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400

-

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Goldney Electronics S.L.

Spain . 82 parts In-Stock

1+ parts

-

100+ parts

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82

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Lantek

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

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9

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Cyclops Electronics Ltd

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 8,796 parts In-Stock

1+ parts

$1.990

100+ parts

$1.940

1k+ parts

$1.930

10k+ parts

-

8,796

$1.990

$1.940

$1.930

-

Continental Prestige Electronics

USA . 5,804 parts In-Stock

1+ parts

$3.001

100+ parts

-

1k+ parts

-

10k+ parts

$2.941

5,804

$3.001

-

-

$2.941

Argo Parts USA

USA . 2,904 parts In-Stock

1+ parts

$3.001

100+ parts

-

1k+ parts

-

10k+ parts

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2,904

$3.001

-

-

-

Bastille Electronics

Australia . 43 parts In-Stock

1+ parts

$3.423

100+ parts

$3.252

1k+ parts

$3.089

10k+ parts

$3.046

43

$3.423

$3.252

$3.089

$3.046

Corphita

USA . 1,512 parts In-Stock

1+ parts

$3.537

100+ parts

-

1k+ parts

-

10k+ parts

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1,512

$3.537

-

-

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Aztec Data Supply Inc.

USA . 3,378 parts In-Stock

1+ parts

$4.280

100+ parts

-

1k+ parts

-

10k+ parts

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3,378

$4.280

-

-

-

Advanced Electronics

New Zealand . 156 parts In-Stock

1+ parts

$4.750

100+ parts

$4.513

1k+ parts

$4.513

10k+ parts

-

156

$4.750

$4.513

$4.513

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Ampacity Inc.

Singapore . 3,261 parts In-Stock

1+ parts

$6.600

100+ parts

-

1k+ parts

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10k+ parts

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3,261

$6.600

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

-

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Corohmni

South Africa . 687 parts In-Stock

1+ parts

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687

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S.R.D Solutions

India . 500 parts In-Stock

1+ parts

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500

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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-

Overview

Unlock the power of reliable and high-quality flash memory with Micron Technology's MT29F2G08ABAEAWP-IT:ETR. Designed for industrial applications, this SLC NAND type memory offers a durable and robust solution for your data storage needs. With a maximum endurance of 100,000 write/erase cycles and a wide operating temperature range, this versatile memory chip ensures exceptional performance and longevity. Trust in Micron Technology's expertise in flash memory technology to provide you with the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the memory package, making it suitable for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible data access, enhancing the performance and efficiency of the flash memory.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V ensures reliable and stable power supply for the flash memory, improving its overall performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making this flash memory a cost-effective and efficient choice.

Endurance: 100000 Write/Erase Cycles

With a high endurance level of 100,000 write/erase cycles, this flash memory is durable and reliable for frequent data read and write operations.

Technical Specifications

Flash Memory MT29F2G08ABAEAWP-IT:ETR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Command User Interface:

YES

Data Polling:

NO

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

2K

No. of Terminals:

48

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F2G08ABAEAWP-IT:ETR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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