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MT29F16G08ABACAWP-AAT:C

Micron Technology

MT29F16G08ABACAWP-AAT:C by Micron Technology

MT29F16G08ABACAWP-AAT:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, 4K page size, and 80000 Write/Erase cycles. It operates in asynchronous mode, has a max temperature of 105°C, and is suitable for applications requiring high endurance and fast access times.

Median Price

$37.520

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 303 parts In-Stock

1+ parts

$31.900

100+ parts

$25.110

1k+ parts

$23.940

10k+ parts

-

303

$31.900

$25.110

$23.940

-

DigiKey

USA . 410 parts In-Stock

1+ parts

$36.970

100+ parts

$31.482

1k+ parts

$30.433

10k+ parts

-

410

$36.970

$31.482

$30.433

-

Arrow

USA . 1,250 parts In-Stock

1+ parts

$37.520

100+ parts

-

1k+ parts

-

10k+ parts

-

1,250

$37.520

-

-

-

Verical

USA . 1,250 parts In-Stock

1+ parts

$37.520

100+ parts

-

1k+ parts

-

10k+ parts

-

1,250

$37.520

-

-

-

Mouser Electronics

USA . 261 parts In-Stock

1+ parts

$49.790

100+ parts

$41.850

1k+ parts

-

10k+ parts

-

261

$49.790

$41.850

-

-

Newark

USA . 984 parts In-Stock

1+ parts

$71.160

100+ parts

-

1k+ parts

-

10k+ parts

-

984

$71.160

-

-

-

Element14

Singapore . 972 parts In-Stock

1+ parts

$96.050

100+ parts

-

1k+ parts

-

10k+ parts

-

972

$96.050

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,626 parts In-Stock

1+ parts

$17.832

100+ parts

-

1k+ parts

-

10k+ parts

-

1,626

$17.832

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$27.700

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$27.700

-

-

-

Chip Stock

USA . 4,573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,573

-

-

-

-

Vyrian

USA . 522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

522

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 841 parts In-Stock

1+ parts

$16.893

100+ parts

-

1k+ parts

-

10k+ parts

-

841

$16.893

-

-

-

Semicontronic

India . 444 parts In-Stock

1+ parts

$22.430

100+ parts

$21.869

1k+ parts

$21.757

10k+ parts

-

444

$22.430

$21.869

$21.757

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$27.700

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$27.700

-

-

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$31.278

100+ parts

$28.776

1k+ parts

$26.964

10k+ parts

-

2,500

$31.278

$28.776

$26.964

-

Continental Prestige Electronics

USA . 470 parts In-Stock

1+ parts

$32.020

100+ parts

$24.770

1k+ parts

-

10k+ parts

-

470

$32.020

$24.770

-

-

Argo Parts USA

USA . 3,028 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,028

-

-

-

-

GreenTree Electronics

Israel . 510 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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510

-

-

-

-

Corohmni

South Africa . 247 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

247

-

-

-

-

Aztec Data Supply Inc.

USA . 125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

125

-

-

-

-

Overview

Experience lightning-fast data storage and retrieval with the MT29F16G08ABACAWP-AAT:C Flash Memory from Micron Technology. As a leading manufacturer in the industry, Micron ensures top-notch quality and reliability in all their products. This versatile flash memory is perfect for a wide range of applications, offering customers exceptional value and benefits. Say goodbye to slow data transfers and hello to seamless performance with this innovative product. Upgrade your devices today and experience the difference with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for efficient handling and protection.

Surface Mount: YES

Easily integrated into circuit boards for seamless installation.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronization.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for stable and efficient performance.

No. of Terms: 48

Sufficient terminals for versatile connectivity options.

Maximum Operating Temperature: 105 °C

Can withstand higher temperatures for extended use.

Organization: 2GX8

Efficient organization for data storage and retrieval.

Output Characteristics: 3-STATE

Allows for high-speed data output with minimal power consumption.

Memory IC Type: FLASH

Reliable flash memory technology for data storage and retrieval.

Endurance: 80000 Write/Erase Cycles

High endurance for longevity and reliability.

Technical Specifications

Flash Memory MT29F16G08ABACAWP-AAT:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

Minimum Data Retention Time:

10

Endurance:

80000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

48

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Ready or Busy:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sector Size (Words):

512K

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABACAWP-AAT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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