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IS21ES08G-JCLI-TR

Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution is an 8GX8 flash memory with 68719476736 bit density. Operating at 3.3V, it features a very thin profile grid array package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed synchronous flash memory with parallel interface.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 7,105 parts In-Stock

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Bristol Electronics

USA . 2,497 parts In-Stock

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Cyclops Electronics Ltd

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Nova Conductors

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Corohmni

South Africa . 24 parts In-Stock

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$2.881

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Aztec Data Supply Inc.

USA . 192 parts In-Stock

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$5.660

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AZTECH Wire

Italy . 897 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Futuretech Components

Singapore . 1,162 parts In-Stock

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Advanced Electronics

New Zealand . 1,072 parts In-Stock

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Authorized Procurement Solutions

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Robosynatics

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Lucentia Tech

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the IS21ES08G-JCLI-TR from Integrated Silicon Solution, a top-of-the-line Flash Memory solution that offers unparalleled quality and reliability. Whether you're in need of high-performance memory for industrial applications or looking to upgrade your technology, this product delivers. With a sleek package design and advanced features like synchronous operation and fine pitch terminal style, this flash memory is a game-changer. Trust Integrated Silicon Solution to provide cutting-edge technology that exceeds your expectations. Experience the difference with the IS21ES08G-JCLI-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the memory component.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation helps in improving data transfer efficiency and speed.

Nominal Supply Voltage (Vsup): 3.3V

Operates at a common and standard voltage level for compatibility with various systems.

Maximum Operating Temperature: 85 °C

Can function effectively in high temperature environments without compromising performance.

Organization: 8GX8

Organized in a high capacity and efficient 8x8 grid structure for optimized memory storage.

Width: 11.5 mm

Compact width design enables space-saving installation in electronic devices.

Memory Width: 8

8-bit memory width allows for efficient data processing and storage.

Maximum Supply Voltage (Vsup): 3.6 V

Safe maximum supply voltage threshold ensures reliable and stable operation.

Memory IC Type: FLASH

Flash memory technology offers fast read/write speeds and non-volatile storage capabilities.

Technical Specifications

Flash Memory IS21ES08G-JCLI-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3.3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11.5 mm

Trade Compliance

IS21ES08G-JCLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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