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MT25QU512ABB1EW9-0SIT

Micron Technology

MT25QU512ABB1EW9-0SIT by Micron Technology

Micron Technology's MT25QU512ABB1EW9-0SIT is a 512M NOR flash memory with 536870912-bit density. Operating at 166 MHz, it has a supply voltage range of 1.7V to 2V and temperature tolerance from -40°C to 85°C. Ideal for industrial applications requiring high-speed synchronous operation in small outline packages.

Median Price

$10.312

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 3,574 parts In-Stock

1+ parts

$10.312

100+ parts

$8.080

1k+ parts

$7.872

10k+ parts

-

3,574

$10.312

$8.080

$7.872

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Farnell

UK . 3,574 parts In-Stock

1+ parts

$10.934

100+ parts

$7.730

1k+ parts

$7.574

10k+ parts

-

3,574

$10.934

$7.730

$7.574

-

Mouser Electronics

USA . 971 parts In-Stock

1+ parts

$14.780

100+ parts

$14.590

1k+ parts

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971

$14.780

$14.590

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Newark

USA . 1,748 parts In-Stock

1+ parts

$17.020

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1,748

$17.020

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Arrow

USA . 44,000 parts In-Stock

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$5.165

44,000

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$5.165

Verical

USA . 44,000 parts In-Stock

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$5.165

44,000

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$5.165

Future Electronics

Canada . 7,680 parts In-Stock

1+ parts

-

100+ parts

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$3.940

10k+ parts

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7,680

-

-

$3.940

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,405 parts In-Stock

1+ parts

$4.180

100+ parts

-

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1,405

$4.180

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$8.250

100+ parts

-

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10

$8.250

-

-

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Chip Stock

USA . 19,153 parts In-Stock

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19,153

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Cyclops Electronics Ltd

UK . 5,920 parts In-Stock

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5,920

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Vyrian

USA . 4,495 parts In-Stock

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4,495

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Sensible Micro Corp

USA . 3,077 parts In-Stock

1+ parts

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3,077

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-

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IBS Electronics

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$76.436

10k+ parts

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1,600

-

-

$76.436

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Component Sense

UK . 793 parts In-Stock

1+ parts

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793

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Bristol Electronics

USA . 50 parts In-Stock

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50

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BCID Electronics Ltd.

Israel . 20 parts In-Stock

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20

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NAC Semi

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,782 parts In-Stock

1+ parts

$3.740

100+ parts

$3.646

1k+ parts

$3.628

10k+ parts

-

4,782

$3.740

$3.646

$3.628

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Ampacity Inc.

Singapore . 3,565 parts In-Stock

1+ parts

$3.740

100+ parts

-

1k+ parts

-

10k+ parts

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3,565

$3.740

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Corphita

USA . 468 parts In-Stock

1+ parts

$3.960

100+ parts

-

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468

$3.960

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Aztec Data Supply Inc.

USA . 7,341 parts In-Stock

1+ parts

$5.570

100+ parts

-

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7,341

$5.570

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iBuyXS LLC

. 6,840 parts In-Stock

1+ parts

$5.940

100+ parts

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6,840

$5.940

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Continental Prestige Electronics

USA . 3,537 parts In-Stock

1+ parts

$7.110

100+ parts

$5.570

1k+ parts

-

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3,537

$7.110

$5.570

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Corohmni

South Africa . 898 parts In-Stock

1+ parts

$8.431

100+ parts

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898

$8.431

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Advanced Electronics

New Zealand . 400 parts In-Stock

1+ parts

$8.684

100+ parts

$8.250

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$8.250

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400

$8.684

$8.250

$8.250

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Microchip USA

USA . 9,732 parts In-Stock

1+ parts

$27.608

100+ parts

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9,732

$27.608

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Futuretech Components

Singapore . 8,000 parts In-Stock

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8,000

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BidChips

USA . 6,840 parts In-Stock

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6,840

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Argo Parts USA

USA . 4,431 parts In-Stock

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4,431

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A-Z Elektronik GmbH

Germany . 4,000 parts In-Stock

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4,000

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Perfect Parts

USA . 3,156 parts In-Stock

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3,156

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Speed Components Ltd (Excess)

Israel . 960 parts In-Stock

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960

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Alle Elektronik GmbH

Germany . 906 parts In-Stock

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906

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Kepictronics

USA . 780 parts In-Stock

1+ parts

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100+ parts

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780

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-

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-

Overview

Elevate your electronic devices with the top-of-the-line MT25QU512ABB1EW9-0SIT from Micron Technology. This high-quality flash memory offers unparalleled reliability and performance, making it a perfect choice for a wide range of applications. With its cutting-edge technology and industrial-grade temperature tolerance, this product ensures seamless operation even in the most demanding environments. Trust Micron Technology to provide you with superior memory solutions that deliver value, efficiency, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage during handling and installation.

Surface Mount: YES

Surface mount technology allows for efficient and compact placement on circuit boards, saving space and making it suitable for smaller electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and reliable data transfer, making it ideal for applications requiring precise timing and synchronization.

Nominal Supply Voltage (Vsup): 1.8V

Operating at a low supply voltage helps reduce power consumption and extends battery life in portable devices.

Maximum Clock Frequency (fCLK): 166 MHz

The high clock frequency enables fast data processing and access speeds, making it suitable for high-performance applications.

Temperature Grade: INDUSTRIAL

Designed to operate in industrial temperature ranges, ensuring reliable performance in harsh environments with extreme temperatures.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

No. of Words: 536870912 words

With a large memory capacity, this product can store a vast amount of data, making it suitable for applications requiring high storage capacity.

Technical Specifications

Flash Memory MT25QU512ABB1EW9-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-N8

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Trade Compliance

MT25QU512ABB1EW9-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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