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MT25QL256ABA1EW7-0SIT

Micron Technology

MT25QL256ABA1EW7-0SIT by Micron Technology

Micron Technology's MT25QL256ABA1EW7-0SIT is a NOR flash memory with 256MX1 organization, 268M words density, and 133 MHz clock frequency. It operates at -40 to 85 °C, suitable for industrial applications requiring high-speed synchronous memory with a small form factor.

Median Price

$4.999

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,991 parts In-Stock

1+ parts

$4.030

100+ parts

$3.690

1k+ parts

$3.300

10k+ parts

-

2,991

$4.030

$3.690

$3.300

-

Arrow

USA . 2,229 parts In-Stock

1+ parts

$4.999

100+ parts

$4.156

1k+ parts

$3.506

10k+ parts

-

2,229

$4.999

$4.156

$3.506

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Farnell

UK . 12,388 parts In-Stock

1+ parts

$6.130

100+ parts

$4.330

1k+ parts

$4.160

10k+ parts

-

12,388

$6.130

$4.330

$4.160

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Newark

USA . 4,339 parts In-Stock

1+ parts

$9.630

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4,339

$9.630

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Element14

Singapore . 2,045 parts In-Stock

1+ parts

$12.960

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2,045

$12.960

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Future Electronics

Canada . 14,700 parts In-Stock

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$2.200

10k+ parts

$2.170

14,700

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-

$2.200

$2.170

Verical

USA . 11,760 parts In-Stock

1+ parts

-

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10k+ parts

$4.136

11,760

-

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-

$4.136

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 278 parts In-Stock

1+ parts

$2.536

100+ parts

-

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278

$2.536

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$5.525

100+ parts

-

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10

$5.525

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Sensible Micro Corp

USA . 23,171 parts In-Stock

1+ parts

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23,171

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Chip Stock

USA . 8,779 parts In-Stock

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8,779

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Vyrian

USA . 6,592 parts In-Stock

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6,592

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Cyclops Electronics Ltd

UK . 1,162 parts In-Stock

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1,162

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Component Sense

UK . 1,032 parts In-Stock

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1,032

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NAC Semi

USA . 201 parts In-Stock

1+ parts

-

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$5.720

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201

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$5.720

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PC Components Company LLC

USA . 185 parts In-Stock

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185

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Bristol Electronics

USA . 85 parts In-Stock

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85

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Atlantic Semiconductor

USA . 65 parts In-Stock

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65

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 483 parts In-Stock

1+ parts

$2.011

100+ parts

-

1k+ parts

-

10k+ parts

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483

$2.011

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Semicontronic

India . 6,370 parts In-Stock

1+ parts

$2.270

100+ parts

$2.213

1k+ parts

$2.202

10k+ parts

-

6,370

$2.270

$2.213

$2.202

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Corphita

USA . 1,084 parts In-Stock

1+ parts

$2.403

100+ parts

-

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10k+ parts

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1,084

$2.403

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.790

100+ parts

$2.651

1k+ parts

$2.651

10k+ parts

-

100

$2.790

$2.651

$2.651

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iBuyXS LLC

. 3,367 parts In-Stock

1+ parts

$3.250

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3,367

$3.250

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Aztec Data Supply Inc.

USA . 6,373 parts In-Stock

1+ parts

$3.780

100+ parts

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6,373

$3.780

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Modulus Dynamics

Lithuania . 900 parts In-Stock

1+ parts

$5.346

100+ parts

$5.292

1k+ parts

$5.132

10k+ parts

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900

$5.346

$5.292

$5.132

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Continental Prestige Electronics

USA . 14,892 parts In-Stock

1+ parts

$5.490

100+ parts

$3.970

1k+ parts

$2.760

10k+ parts

-

14,892

$5.490

$3.970

$2.760

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Netroflash

USA . 100 parts In-Stock

1+ parts

$5.525

100+ parts

$5.415

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100

$5.525

$5.415

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QUARKTWIN TECHNOLOGY LTD

USA . 28,227 parts In-Stock

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28,227

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RC Electronics

USA . 8,145 parts In-Stock

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8,145

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A-Z Elektronik GmbH

Germany . 8,000 parts In-Stock

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8,000

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GreenTree Electronics

Israel . 3,500 parts In-Stock

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3,500

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BidChips

USA . 3,367 parts In-Stock

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3,367

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Metaverse IC Inc.

Canada . 3,159 parts In-Stock

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3,159

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Robosynatics

Brazil . 1,379 parts In-Stock

1+ parts

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1,379

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-

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Lucentia Tech

USA . 1,379 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.357

10k+ parts

$0.357

1,379

-

$0.357

$0.357

$0.357

Kepictronics

USA . 1,041 parts In-Stock

1+ parts

-

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1,041

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Futuretech Components

Singapore . 800 parts In-Stock

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800

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Argo Parts USA

USA . 467 parts In-Stock

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467

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Overview

Experience the next level of performance and reliability with the MT25QL256ABA1EW7-0SIT by Micron Technology. As a leader in flash memory technology, Micron delivers cutting-edge solutions that exceed industry standards. This high-quality product is perfect for a wide range of applications, offering superior value and benefits to customers. Trust Micron Technology to provide you with top-of-the-line products that will enhance your experience and meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes it lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved system performance.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard supply voltage of 3V, ensuring compatibility with a wide range of devices.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without compromising performance.

Organization: 256MX1

Organized in a 256MX1 configuration, providing high memory density in a compact form factor.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low-temperature conditions, suitable for various applications.

Memory Density: 268435456 bit

Offers a high memory density of 268435456 bits, allowing for storage of large amounts of data.

Memory IC Type: FLASH

Utilizes flash memory technology, offering fast read and write speeds for efficient data storage and retrieval.

Technical Specifications

Flash Memory MT25QL256ABA1EW7-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

5 mm

Trade Compliance

MT25QL256ABA1EW7-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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