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MT25QU01GBBB8E12-0SIT

Micron Technology

MT25QU01GBBB8E12-0SIT by Micron Technology

Micron Technology's MT25QU01GBBB8E12-0SIT is a 1Gx1 Flash Memory IC with 1073741824-bit memory density. Operating at 166MHz, it has a synchronous mode and operates b/w -40 to 85°C. Suitable for industrial applications, this thin-profile GRID ARRAY package offers serial communication with a terminal pitch of 1mm.

Median Price

$16.409

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,100 parts In-Stock

1+ parts

$11.730

100+ parts

$10.050

1k+ parts

$9.470

10k+ parts

-

7,100

$11.730

$10.050

$9.470

-

Farnell

UK . 1,266 parts In-Stock

1+ parts

$15.690

100+ parts

$12.070

1k+ parts

-

10k+ parts

-

1,266

$15.690

$12.070

-

-

Arrow

USA . 1,905 parts In-Stock

1+ parts

$17.128

100+ parts

$17.128

1k+ parts

$17.128

10k+ parts

$17.128

1,905

$17.128

$17.128

$17.128

$17.128

Verical

USA . 1,905 parts In-Stock

1+ parts

$17.128

100+ parts

$17.128

1k+ parts

$17.128

10k+ parts

$17.128

1,905

$17.128

$17.128

$17.128

$17.128

Element14

Singapore . 1,266 parts In-Stock

1+ parts

$25.480

100+ parts

$20.170

1k+ parts

-

10k+ parts

-

1,266

$25.480

$20.170

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Future Electronics

Canada . 6,732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.530

10k+ parts

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6,732

-

-

$6.530

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EBV Elektronik

Germany . 4,488 parts In-Stock

1+ parts

-

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4,488

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,200 parts In-Stock

1+ parts

$14.193

100+ parts

-

1k+ parts

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10k+ parts

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2,200

$14.193

-

-

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Nova Conductors

Japan . 71 parts In-Stock

1+ parts

$14.785

100+ parts

-

1k+ parts

-

10k+ parts

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71

$14.785

-

-

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Chip Stock

USA . 15,600 parts In-Stock

1+ parts

-

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15,600

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-

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Component Sense

UK . 10,218 parts In-Stock

1+ parts

-

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10,218

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

1+ parts

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10,000

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-

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North Shore Components

USA . 4,453 parts In-Stock

1+ parts

-

100+ parts

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4,453

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

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4,000

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Vyrian

USA . 2,944 parts In-Stock

1+ parts

-

100+ parts

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2,944

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NAC Semi

USA . 2,696 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$16.320

2,696

-

-

-

$16.320

ComSIT Distribution GmbH

Germany . 290 parts In-Stock

1+ parts

-

100+ parts

-

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290

-

-

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Sensible Micro Corp

USA . 290 parts In-Stock

1+ parts

-

100+ parts

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290

-

-

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Rebound Electronics

UK . 200 parts In-Stock

1+ parts

-

100+ parts

-

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200

-

-

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ComSIT USA

USA . 187 parts In-Stock

1+ parts

-

100+ parts

-

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187

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Conversion2

USA . 52 parts In-Stock

1+ parts

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52

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Bristol Electronics

USA . 13 parts In-Stock

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13

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 400 parts In-Stock

1+ parts

$2.579

100+ parts

$2.450

1k+ parts

$2.450

10k+ parts

-

400

$2.579

$2.450

$2.450

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Aztec Data Supply Inc.

USA . 1,805 parts In-Stock

1+ parts

$3.710

100+ parts

-

1k+ parts

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10k+ parts

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1,805

$3.710

-

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Corohmni

South Africa . 1,452 parts In-Stock

1+ parts

$3.785

100+ parts

-

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1,452

$3.785

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Semicontronic

India . 5,632 parts In-Stock

1+ parts

$12.700

100+ parts

$12.382

1k+ parts

$12.319

10k+ parts

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5,632

$12.700

$12.382

$12.319

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Ampacity Inc.

Singapore . 3,092 parts In-Stock

1+ parts

$12.700

100+ parts

-

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3,092

$12.700

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Corphita

USA . 207 parts In-Stock

1+ parts

$13.446

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207

$13.446

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Continental Prestige Electronics

USA . 986 parts In-Stock

1+ parts

$14.930

100+ parts

$11.290

1k+ parts

-

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986

$14.930

$11.290

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Speed Components Ltd (Excess)

Israel . 2,980 parts In-Stock

1+ parts

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2,980

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A-Z Elektronik GmbH

Germany . 2,634 parts In-Stock

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2,634

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Futuretech Components

Singapore . 1,122 parts In-Stock

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1,122

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Infinite Electronics LLP (Excess)

. 910 parts In-Stock

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910

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Kepictronics

USA . 769 parts In-Stock

1+ parts

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769

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Argo Parts USA

USA . 732 parts In-Stock

1+ parts

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100+ parts

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732

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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500

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Overview

Unlock a world of endless possibilities with the MT25QU01GBBB8E12-0SIT by Micron Technology. This cutting-edge flash memory device boasts unparalleled quality and reliability, making it the top choice for a wide range of applications. With its sleek design and advanced technology, this product offers customers a seamless experience like never before. Don't settle for anything less than the best - choose Micron Technology for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection to the flash memory, making it suitable for rugged environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation of the flash memory on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data synchronization and reliable performance in data transfers.

Nominal Supply Voltage: 1.8V

The low nominal supply voltage of 1.8V helps in reducing power consumption and extending battery life in devices using this flash memory.

Maximum Clock Frequency (fCLK): 166 MHz

With a high maximum clock frequency of 166 MHz, this flash memory is capable of fast data processing and retrieval.

Memory Density: 1073741824 bit

High memory density of 1073741824 bits allows for storing large amounts of data in the flash memory.

Technical Specifications

Flash Memory MT25QU01GBBB8E12-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

MT25QU01GBBB8E12-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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