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MT25QL128ABA1ESE-0SITTR

Micron Technology

MT25QL128ABA1ESE-0SITTR by Micron Technology

Micron Technology's MT25QL128ABA1ESE-0SITTR is a 16Mx8 flash memory IC with 134,217,728-bit density. Operating at 133MHz clock frequency and 3V programming voltage, it suits industrial applications requiring small outline packages and synchronous operation.

Median Price

$2.866

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,911 parts In-Stock

1+ parts

$2.800

100+ parts

$2.340

1k+ parts

$1.880

10k+ parts

$1.820

3,911

$2.800

$2.340

$1.880

$1.820

Arrow

USA . 17,917 parts In-Stock

1+ parts

$2.931

100+ parts

$2.568

1k+ parts

$2.448

10k+ parts

$2.406

17,917

$2.931

$2.568

$2.448

$2.406

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$3.735

36,000

-

-

-

$3.735

Future Electronics

Canada . 22,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.330

22,500

-

-

-

$1.330

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 962 parts In-Stock

1+ parts

$2.784

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$2.784

-

-

-

Nova Conductors

Japan . 46 parts In-Stock

1+ parts

$3.901

100+ parts

-

1k+ parts

-

10k+ parts

-

46

$3.901

-

-

-

Chip Stock

USA . 43,170 parts In-Stock

1+ parts

-

100+ parts

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43,170

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-

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IBS Electronics

USA . 35,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.395

10k+ parts

-

35,550

-

-

$6.395

-

NAC Semi

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.820

33,000

-

-

-

$1.820

Vyrian

USA . 16,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

16,506

-

-

-

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Semtec, LLC

USA . 14,306 parts In-Stock

1+ parts

-

100+ parts

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14,306

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-

-

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Component Sense

UK . 1,266 parts In-Stock

1+ parts

-

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1,266

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Amalfi Trading

USA . 1,135 parts In-Stock

1+ parts

-

100+ parts

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1,135

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ComSIT Distribution GmbH

Germany . 894 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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894

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 46,892 parts In-Stock

1+ parts

$2.490

100+ parts

$2.428

1k+ parts

$2.415

10k+ parts

-

46,892

$2.490

$2.428

$2.415

-

Ampacity Inc.

Singapore . 16,836 parts In-Stock

1+ parts

$2.490

100+ parts

-

1k+ parts

-

10k+ parts

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16,836

$2.490

-

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-

Corphita

USA . 1,298 parts In-Stock

1+ parts

$2.638

100+ parts

-

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-

10k+ parts

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1,298

$2.638

-

-

-

Continental Prestige Electronics

USA . 4,651 parts In-Stock

1+ parts

$3.295

100+ parts

-

1k+ parts

-

10k+ parts

$3.229

4,651

$3.295

-

-

$3.229

Argo Parts USA

USA . 3,877 parts In-Stock

1+ parts

$3.295

100+ parts

-

1k+ parts

-

10k+ parts

-

3,877

$3.295

-

-

-

Advanced Electronics

New Zealand . 1,050 parts In-Stock

1+ parts

$3.380

100+ parts

$3.211

1k+ parts

$3.211

10k+ parts

-

1,050

$3.380

$3.211

$3.211

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$3.823

100+ parts

-

1k+ parts

$3.670

10k+ parts

-

1,000

$3.823

-

$3.670

-

Aztec Data Supply Inc.

USA . 3,789 parts In-Stock

1+ parts

$3.910

100+ parts

-

1k+ parts

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10k+ parts

-

3,789

$3.910

-

-

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Corohmni

South Africa . 2,142 parts In-Stock

1+ parts

$4.332

100+ parts

-

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10k+ parts

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2,142

$4.332

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-

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Robosynatics

Brazil . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,000

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-

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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Lucentia Tech

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$37.068

1k+ parts

$37.068

10k+ parts

$37.068

3,000

-

$37.068

$37.068

$37.068

Overview

Enhance your electronic devices with the cutting-edge MT25QL128ABA1ESE-0SITTR Flash Memory from Micron Technology. Crafted with precision and innovation, this flash memory boasts high-quality performance, reliability, and durability. Ideal for industrial applications, this flash memory offers seamless operation in extreme temperatures and demanding conditions. Experience lightning-fast data transfer speeds and efficient storage capabilities with Micron's top-of-the-line technology. Upgrade your devices today and unlock a whole new level of efficiency and productivity with the MT25QL128ABA1ESE-0SITTR Flash Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, making installation and assembly more efficient.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer speeds and better overall performance.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage of 3V, compatible with most systems and devices.

No. of Terminals: 8

8 terminals provide ample connections for interfacing with other components, ensuring reliable data transmission.

Maximum Operating Temperature: 85 °C

Capable of withstanding high temperatures, making it suitable for industrial applications where heat may be a factor.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this flash memory can function in extreme cold environments.

Maximum Clock Frequency (fCLK): 133 MHz

High clock frequency allows for fast data processing and access, making this flash memory ideal for high-performance devices.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall efficiency and reliability.

Memory IC Type: FLASH

Flash memory provides non-volatile storage, retaining data even when power is turned off, making it a reliable choice for storing important information.

Technical Specifications

Flash Memory MT25QL128ABA1ESE-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

2.16 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.285 mm

Trade Compliance

MT25QL128ABA1ESE-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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