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M25P16-VMN6PBA

Micron Technology

M25P16-VMN6PBA by Micron Technology

M25P16-VMN6PBA by Micron Technology is a 2MX8 NOR type flash memory with 75 MHz clock frequency. It operates at -40 to 85 °C and has 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,885 parts In-Stock

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Chip Stock

USA . 5,974 parts In-Stock

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5,974

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

USA . 198 parts In-Stock

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198

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North Shore Components

USA . 69 parts In-Stock

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69

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Semi Source

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Distributors (Availability)

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Ampacity Inc.

Singapore . 430 parts In-Stock

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$2.000

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430

$2.000

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Advanced Electronics

New Zealand . 540 parts In-Stock

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$4.247

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$4.034

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$4.034

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540

$4.247

$4.034

$4.034

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Corohmni

South Africa . 149 parts In-Stock

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$4.610

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149

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Aztec Data Supply Inc.

USA . 4,775 parts In-Stock

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$5.560

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$5.560

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AZTECH Wire

Italy . 556 parts In-Stock

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$6.550

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556

$6.550

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Semicontronic

India . 894 parts In-Stock

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$28.000

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$27.300

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$27.160

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894

$28.000

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Continental Prestige Electronics

USA . 6,810 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Argo Parts USA

USA . 1,576 parts In-Stock

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Corphita

USA . 775 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock the power of reliable and high-quality Flash Memory with the M25P16-VMN6PBA by Micron Technology. Designed with cutting-edge technology and industrial-grade components, this NOR type memory offers 2MX8 organization and 100,000 write/erase cycles for unparalleled performance. Perfect for applications requiring fast and secure data storage, the M25P16-VMN6PBA provides a maximum clock frequency of 75 MHz and operates at a wide temperature range from -40°C to 85°C. Trust Micron's expertise in flash memory technology to deliver value, durability, and efficiency to your projects with the M25P16-VMN6PBA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions.

Surface Mount: YES

Easily mountable on PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard voltage systems, ensuring easy integration.

Operating Mode: SYNCHRONOUS

Allows for faster and more efficient data transfer.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments without compromising performance.

Organization: 2MX8

Efficient organization of memory that allows for optimal data storage.

Write Protection: HARDWARE/SOFTWARE

Provides security for stored data by enabling write protection.

Maximum Clock Frequency (fCLK): 75 MHz

High clock frequency for fast read and write operations.

Memory Density: 16777216 bit

High memory density for storing large amounts of data in a compact space.

Endurance: 100000 Write/Erase Cycles

Long-lasting and reliable memory that can handle frequent read/write operations.

Technical Specifications

Flash Memory M25P16-VMN6PBA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

75 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M25P16-VMN6PBA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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