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N25Q128A13ESE40E

Micron Technology

N25Q128A13ESE40E by Micron Technology

N25Q128A13ESE40E by Micron Technology is a NOR type flash memory with 16Mx8 organization, operating at up to 108 MHz clock frequency. It features hardware/software write protection and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Pegasus Components GmbH

Germany . 1,800 parts In-Stock

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1,800

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Digiode

USA . 1,612 parts In-Stock

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1,612

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Vyrian

USA . 501 parts In-Stock

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501

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Bristol Electronics

USA . 185 parts In-Stock

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185

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Atlantic Semiconductor

USA . 181 parts In-Stock

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181

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Semi Source

USA . 31 parts In-Stock

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31

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PC Components Company LLC

USA . 8 parts In-Stock

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8

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Prism Electronics

USA . 5 parts In-Stock

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5

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A2Z Electronics, Inc.

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 736 parts In-Stock

1+ parts

$4.000

100+ parts

-

1k+ parts

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736

$4.000

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Semicontronic

India . 1,407 parts In-Stock

1+ parts

$5.000

100+ parts

$4.875

1k+ parts

$4.850

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1,407

$5.000

$4.875

$4.850

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Aztec Data Supply Inc.

USA . 168 parts In-Stock

1+ parts

$5.470

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168

$5.470

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Corohmni

South Africa . 89 parts In-Stock

1+ parts

$5.674

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89

$5.674

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$5.836

100+ parts

$5.544

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$5.544

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5,000

$5.836

$5.544

$5.544

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AZTECH Wire

Italy . 201 parts In-Stock

1+ parts

$18.550

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201

$18.550

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Perfect Parts

USA . 50,518 parts In-Stock

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Epart123

USA . 7,200 parts In-Stock

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$1.960

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$1.960

7,200

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$1.960

$1.960

Continental Prestige Electronics

USA . 4,238 parts In-Stock

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4,238

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Argo Parts USA

USA . 3,437 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Kepictronics

USA . 1,500 parts In-Stock

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1,500

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Sternenhof Electronics (Excess)

Switzerland . 1,500 parts In-Stock

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1,500

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Futuretech Components

Singapore . 720 parts In-Stock

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720

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Corphita

USA . 558 parts In-Stock

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558

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Formix International (Excess)

India . 512 parts In-Stock

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512

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Computer Components Inc. - USA

USA . 300 parts In-Stock

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300

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Overview

Elevate your electronics with the N25Q128A13ESE40E by Micron Technology, a cutting-edge flash memory solution that guarantees top-notch quality and reliability. With a reputation for excellence in manufacturing, Micron Technology delivers a product that surpasses industry standards. Ideal for a wide range of applications, this flash memory offers unparalleled value, benefits, and advantages to customers seeking high-performance storage solutions. Upgrade your devices with Micron Technology's N25Q128A13ESE40E and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the flash memory chip, ensuring it can withstand various environmental conditions.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is common in most electronic devices, making this flash memory compatible with a wide range of applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can function reliably even in high-temperature environments, making it suitable for industrial use.

Organization: 16MX8

The organization of 16MX8 means the flash memory has a capacity of 16 Megabytes with 8 data lines, offering ample storage space for data-intensive applications.

Minimum Operating Temperature: -40 °C

The flash memory can operate efficiently in cold temperatures as low as -40°C, making it suitable for use in a variety of climates and conditions.

Write Protection: HARDWARE/SOFTWARE

With write protection capabilities through both hardware and software, this flash memory offers enhanced security features to prevent unauthorized data modification or deletion.

Maximum Clock Frequency (fCLK): 108 MHz

The high maximum clock frequency of 108 MHz allows for fast data transfer speeds and efficient performance, making this flash memory ideal for applications requiring quick access to data.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile storage for data, ensuring data retention even when the power is turned off, making it a reliable choice for storing important information.

Technical Specifications

Flash Memory N25Q128A13ESE40E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.41

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.16 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

5.285 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13ESE40E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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