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N25Q256A13ESF40G

Micron Technology

N25Q256A13ESF40G by Micron Technology

Micron Technology's N25Q256A13ESF40G is a 256MX1 NOR flash memory with 108 MHz clock frequency, SPI serial bus type, and 100000 write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in a compact small outline package.

Median Price

$14.950

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 13 parts In-Stock

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$14.950

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DF Sales Co.

USA . 13 parts In-Stock

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$14.950

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Vyrian

USA . 3,113 parts In-Stock

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Chip Stock

USA . 2,700 parts In-Stock

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Sensible Micro Corp

USA . 2,400 parts In-Stock

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Digiode

USA . 1,634 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Bristol Electronics

USA . 75 parts In-Stock

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Avant Electronics Limited

UK . 45 parts In-Stock

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Micros

Poland . 28 parts In-Stock

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$4.449

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$4.266

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28

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Cyclops Electronics Ltd

UK . 20 parts In-Stock

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Velocity Electronics

USA . 8 parts In-Stock

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PC Components Company LLC

USA . 5 parts In-Stock

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Elcom Components

USA . 4 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 511 parts In-Stock

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$3.668

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511

$3.668

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Aztec Data Supply Inc.

USA . 261 parts In-Stock

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$4.160

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261

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Andel Nordic

Denmark . 262 parts In-Stock

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$6.554

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$6.292

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$6.292

262

$6.554

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$6.292

$6.292

AZTECH Wire

Italy . 428 parts In-Stock

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$13.065

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428

$13.065

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Semicontronic

India . 362 parts In-Stock

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$14.000

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$13.650

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$13.580

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362

$14.000

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$13.580

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Ampacity Inc.

Singapore . 963 parts In-Stock

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$24.000

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963

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Perfect Parts

USA . 15,110 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,754 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 4,778 parts In-Stock

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Argo Parts USA

USA . 3,824 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Benley Electronics

USA . 1,255 parts In-Stock

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Futuretech Components

Singapore . 770 parts In-Stock

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Continental Prestige Electronics

USA . 450 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Corphita

USA . 276 parts In-Stock

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Microchip USA

USA . 102 parts In-Stock

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Kepictronics

USA . 65 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 28 parts In-Stock

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iodParts Technologies Inc.

India . 15 parts In-Stock

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Overview

Looking for reliable flash memory with top-tier quality and performance? Look no further than the N25Q256A13ESF40G by Micron Technology. With its durable plastic/epoxy body, synchronous operation, and wide temperature range, this versatile memory device is perfect for industrial applications. Enjoy the benefits of fast data transfer speeds, low power consumption, and a high level of endurance with 100,000 write/erase cycles. Trust in Micron Technology's expertise to deliver a superior product that meets your needs effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection for the flash memory, ensuring it can withstand various environmental conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, making this flash memory ideal for applications where speed is crucial.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection options ensures that the data stored in the flash memory is secure and cannot be accidentally overwritten or corrupted.

Memory Density: 268435456 bit

With a high memory density, this flash memory can store a large amount of data, making it suitable for applications that require a lot of storage space.

Endurance: 100000 Write/Erase Cycles

The high endurance rating of 100,000 write/erase cycles ensures longevity and reliability of the flash memory, making it a durable choice for frequent data read/write operations.

Technical Specifications

Flash Memory N25Q256A13ESF40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Maximum Write Cycle Time (tWC):

8 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q256A13ESF40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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