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N25Q128A11ESE40G

Micron Technology

N25Q128A11ESE40G by Micron Technology

N25Q128A11ESE40G by Micron Technology is a NOR flash memory with 128Mx1 organization, operating at 108MHz. It features a programming voltage of 3V and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact form factors.

Median Price

$1.730

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.730

100+ parts

-

1k+ parts

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500

$1.730

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Vyrian

USA . 4,870 parts In-Stock

1+ parts

-

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4,870

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Chip Stock

USA . 3,500 parts In-Stock

1+ parts

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3,500

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Digiode

USA . 1,525 parts In-Stock

1+ parts

-

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1,525

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Rebound Electronics

UK . 25 parts In-Stock

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25

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Electronics Depot

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,929 parts In-Stock

1+ parts

$1.730

100+ parts

-

1k+ parts

-

10k+ parts

$1.695

2,929

$1.730

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-

$1.695

Argo Parts USA

USA . 160 parts In-Stock

1+ parts

$1.730

100+ parts

-

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160

$1.730

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$1.730

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50

$1.730

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Semicontronic

India . 477 parts In-Stock

1+ parts

$2.000

100+ parts

$1.950

1k+ parts

$1.940

10k+ parts

-

477

$2.000

$1.950

$1.940

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Aztec Data Supply Inc.

USA . 3,115 parts In-Stock

1+ parts

$2.020

100+ parts

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3,115

$2.020

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$2.550

100+ parts

$2.423

1k+ parts

$2.423

10k+ parts

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350

$2.550

$2.423

$2.423

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Corohmni

South Africa . 66 parts In-Stock

1+ parts

$2.567

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66

$2.567

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Ampacity Inc.

Singapore . 1,561 parts In-Stock

1+ parts

$3.000

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1,561

$3.000

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AZTECH Wire

Italy . 338 parts In-Stock

1+ parts

$5.155

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338

$5.155

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Kepictronics

USA . 7,020 parts In-Stock

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7,020

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A-Z Elektronik GmbH

Germany . 6,537 parts In-Stock

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6,537

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Corphita

USA . 1,395 parts In-Stock

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1,395

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Microchip USA

USA . 434 parts In-Stock

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434

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Perfect Parts

USA . 18 parts In-Stock

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18

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Formix International (Excess)

India . 3 parts In-Stock

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3

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Overview

Experience lightning-fast data retrieval and storage capabilities with the N25Q128A11ESE40G by Micron Technology. As a leader in flash memory technology, Micron ensures top-notch quality and reliability in all its products. This small outline package offers an impressive 128MX1 organization, making it perfect for industrial applications where speed and endurance are crucial. With a maximum clock frequency of 108 MHz and 100,000 write/erase cycles, this NOR type memory IC provides unmatched performance and durability. Upgrade your systems today with Micron's cutting-edge flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring the product is robust and easy to handle.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and better coordination with other components in the system.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage for efficient performance and power consumption.

Write Protection: HARDWARE/SOFTWARE

Ensures data security by allowing for both hardware and software-based write protection.

Maximum Clock Frequency (fCLK): 108 MHz

High clock frequency for quick access and transfer of data.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures the product can withstand harsh operating conditions.

Endurance: 100000 Write/Erase Cycles

High endurance for frequent read/write operations, increasing the lifespan of the product.

Memory Density: 134217728 bit

Large memory density for storing a significant amount of data efficiently.

Technical Specifications

Flash Memory N25Q128A11ESE40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.16 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

5.285 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A11ESE40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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