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N25Q256A83ESF40G

Micron Technology

N25Q256A83ESF40G by Micron Technology

Micron Technology's N25Q256A83ESF40G is a 256Mbit NOR flash memory with 108MHz clock frequency, operating at -40 to 85°C. It has a supply voltage range of 2.7V to 3.6V and is ideal for industrial applications requiring high-speed synchronous operation in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 21,900 parts In-Stock

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Vyrian

USA . 4,826 parts In-Stock

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Digiode

USA . 1,323 parts In-Stock

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1,323

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Semi Source

USA . 130 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 533 parts In-Stock

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$5.860

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533

$5.860

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Corohmni

South Africa . 226 parts In-Stock

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$5.976

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226

$5.976

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Ampacity Inc.

Singapore . 1,238 parts In-Stock

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$7.000

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1,238

$7.000

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AZTECH Wire

Italy . 365 parts In-Stock

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$11.086

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$11.086

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Semicontronic

India . 490 parts In-Stock

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$19.000

100+ parts

$18.525

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$18.430

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490

$19.000

$18.525

$18.430

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,933 parts In-Stock

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Argo Parts USA

USA . 2,031 parts In-Stock

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Corphita

USA . 1,995 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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Microchip USA

USA . 241 parts In-Stock

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Kepictronics

USA . 180 parts In-Stock

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180

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Overview

Experience lightning-fast data storage and retrieval with the N25Q256A83ESF40G by Micron Technology. As a leading manufacturer in the industry, Micron Technology brings you top-quality flash memory that is perfect for a wide range of applications. Whether you need reliable storage for your IoT devices, automotive systems, or industrial equipment, this product offers exceptional value with its high performance and durability. Trust Micron Technology to deliver cutting-edge solutions that meet your memory needs seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory chip, ensuring it is able to withstand various environmental conditions.

Surface Mount: YES

Surface mount capability makes it easy to integrate this flash memory chip onto circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved efficiency in data processing, making this flash memory chip suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at 3V ensures compatibility with a wide range of electronic devices and systems, making this flash memory chip versatile and widely applicable.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory chip can function reliably in various thermal conditions, making it suitable for industrial use.

Organization: 256MX1

The organization of 256MX1 offers a high memory density and efficient data storage capacity, making this flash memory chip ideal for storing large amounts of data.

Maximum Clock Frequency (fCLK): 108 MHz

With a maximum clock frequency of 108 MHz, this flash memory chip can handle high-speed data transfer and processing, making it suitable for demanding applications.

Technology: CMOS

CMOS technology enables low power consumption and high-speed operation, making this flash memory chip energy-efficient and reliable for extended use.

Parallel or Serial: SERIAL

Serial interface allows for simple communication with other devices and systems, making this flash memory chip easy to integrate into various electronic products.

Technical Specifications

Flash Memory N25Q256A83ESF40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

7.5 mm

Trade Compliance

N25Q256A83ESF40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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