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N25Q032A13ESC40F

Micron Technology

N25Q032A13ESC40F by Micron Technology

Micron Technology's N25Q032A13ESC40F is a NOR flash memory with 32Mx1 organization, operating at 3V. It offers a max clock frequency of 108MHz and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed synchronous operation and reliable data storage in compact designs.

Median Price

$1.255

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.450

10k+ parts

$1.350

2,500

-

-

$1.450

$1.350

Mouser Electronics

USA . 1,494 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$1.060

1,494

-

-

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$1.060

Distributors (In-Stock)

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Nova Conductors

Japan . 40 parts In-Stock

1+ parts

$1.173

100+ parts

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40

$1.173

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Flip Electronics

USA . 30,000 parts In-Stock

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Kruse Electronics AG

Switzerland . 20,000 parts In-Stock

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Kruse

Germany . 20,000 parts In-Stock

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Vyrian

USA . 8,710 parts In-Stock

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8,710

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Chip Stock

USA . 8,568 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,320 parts In-Stock

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3,320

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ComSIT USA

USA . 3,320 parts In-Stock

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3,320

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Semi Source

USA . 386 parts In-Stock

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386

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Digiode

USA . 348 parts In-Stock

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348

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Martec Srl

Italy . 117 parts In-Stock

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A2Z Electronics, Inc.

USA . 112 parts In-Stock

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112

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Bristol Electronics

USA . 112 parts In-Stock

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112

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Prism Electronics

USA . 60 parts In-Stock

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60

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Sunrise Surplus Inc.

USA . 20 parts In-Stock

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20

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ACDS - Activité Composants Distribution Service

France . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,561 parts In-Stock

1+ parts

$0.900

100+ parts

-

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1,561

$0.900

-

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Continental Prestige Electronics

USA . 3,496 parts In-Stock

1+ parts

$1.173

100+ parts

-

1k+ parts

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10k+ parts

$1.149

3,496

$1.173

-

-

$1.149

Argo Parts USA

USA . 588 parts In-Stock

1+ parts

$1.173

100+ parts

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588

$1.173

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Component Stockers USA

USA . 27,620 parts In-Stock

1+ parts

$1.500

100+ parts

$1.180

1k+ parts

$1.110

10k+ parts

$1.030

27,620

$1.500

$1.180

$1.110

$1.030

Aztec Data Supply Inc.

USA . 317 parts In-Stock

1+ parts

$2.180

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317

$2.180

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S.R.D Solutions

India . 60,000 parts In-Stock

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RC Electronics

USA . 31,728 parts In-Stock

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Perfect Parts

USA . 17,305 parts In-Stock

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Futuretech Components

Singapore . 13,573 parts In-Stock

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Kepictronics

USA . 6,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,379 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Corphita

USA . 1,019 parts In-Stock

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Advanced Electronics

New Zealand . 750 parts In-Stock

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750

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Netroflash

USA . 50 parts In-Stock

1+ parts

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$1.149

1k+ parts

$1.114

10k+ parts

$1.090

50

-

$1.149

$1.114

$1.090

Authorized Procurement Solutions

USA . 36 parts In-Stock

1+ parts

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Speed Components Ltd (Excess)

Israel . 20 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3 parts In-Stock

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3

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Overview

Unleash the power of high-quality flash memory with the N25Q032A13ESC40F by Micron Technology. Designed to meet the demands of industrial applications, this versatile memory solution offers reliable performance and durability. With 32M words of memory density and 100,000 write/erase cycles, this NOR type memory chip is perfect for a wide range of applications. Whether you need fast and efficient data storage or secure programming options, the N25Q032A13ESC40F delivers exceptional value and performance. Upgrade your devices with Micron Technology's cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it suitable for various environments and handling conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, enhancing the overall performance of the flash memory.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand heat and function reliably in demanding industrial settings.

Write Protection: HARDWARE/SOFTWARE

The option of hardware and software write protection ensures data security and prevents accidental or unauthorized modification of stored information.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating of 100,000 write/erase cycles, this flash memory offers long-lasting reliability and performance for repeated data read/write operations.

Technical Specifications

Flash Memory N25Q032A13ESC40F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q032A13ESC40F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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