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JS28F640J3F75A

Micron Technology

JS28F640J3F75A by Micron Technology

Micron Technology's JS28F640J3F75A is a 64Mb NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a parallel interface, 4194304 words capacity, and peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.

Median Price

$3.551

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 70 parts In-Stock

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Chip Stock

USA . 19,440 parts In-Stock

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Cyclops Electronics Ltd

UK . 11,520 parts In-Stock

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Bristol Electronics

USA . 7,584 parts In-Stock

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A&K Electronics

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Touchstone Systems

USA . 5,864 parts In-Stock

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Vyrian

USA . 5,730 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Rotakorn

Sweden . 2,880 parts In-Stock

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Digiode

USA . 2,009 parts In-Stock

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Sternenhof Electronics

Switzerland . 1,706 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 792 parts In-Stock

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ComSIT Distribution GmbH

Germany . 353 parts In-Stock

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ComSIT USA

USA . 353 parts In-Stock

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Sensible Micro Corp

USA . 260 parts In-Stock

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J2 Sourcing AB

Sweden . 103 parts In-Stock

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Lantek

USA . 68 parts In-Stock

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Odintec Ltd.

Israel . 32 parts In-Stock

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Rebound Electronics

UK . 20 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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Speed Components Ltd

Israel . 5 parts In-Stock

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Inventory MP

USA . 3 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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Ashlea Components Ltd

UK . 3 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 1,700 parts In-Stock

1+ parts

$1.960

100+ parts

$1.860

1k+ parts

$1.800

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1,700

$1.960

$1.860

$1.800

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$3.551

100+ parts

$3.373

1k+ parts

$3.205

10k+ parts

$3.160

100

$3.551

$3.373

$3.205

$3.160

Argo Parts USA

USA . 3,726 parts In-Stock

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$3.551

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Continental Prestige Electronics

USA . 1,728 parts In-Stock

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$3.551

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$3.480

1,728

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$3.480

Aztec Data Supply Inc.

USA . 2,762 parts In-Stock

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$5.570

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Andel Nordic

Denmark . 437 parts In-Stock

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$10.148

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$9.742

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$9.742

437

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$9.742

AZTECH Wire

Italy . 745 parts In-Stock

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$17.837

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$17.837

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Ampacity Inc.

Singapore . 735 parts In-Stock

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$22.000

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Perfect Parts

USA . 52,826 parts In-Stock

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S.R.D Solutions

India . 30,000 parts In-Stock

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GreenTree Electronics

Israel . 22,351 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 12,010 parts In-Stock

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RC Electronics

USA . 5,997 parts In-Stock

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$3.620

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$3.310

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$3.210

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Futuretech Components

Singapore . 5,000 parts In-Stock

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Epart123

USA . 5,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,956 parts In-Stock

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Corphita

USA . 2,277 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,363 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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iodParts Technologies Inc.

India . 353 parts In-Stock

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353

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Microchip USA

USA . 179 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2 parts In-Stock

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Overview

Discover the Micron Technology JS28F640J3F75A, a high-quality Flash Memory solution designed for a wide range of applications. With Micron's reputation for excellence in technology manufacturing, this product offers unparalleled reliability and performance. Ideal for industrial use, this NOR type memory provides fast access times and low power consumption, making it a cost-effective choice for your project. Experience the benefits of advanced CMOS technology and innovative design with Micron Technology's JS28F640J3F75A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it suitable for various operating environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and parallel data transfers, enhancing the speed and efficiency of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Nominal supply voltage of 3V ensures compatibility with a wide range of devices and systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can function reliably even in high-temperature environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance, making this flash memory energy-efficient and fast.

Memory IC Type: FLASH

Being a flash memory IC type, this product provides non-volatile storage capability for storing and transferring data reliably.

Technical Specifications

Flash Memory JS28F640J3F75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

64

No. of Terminals:

56

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

54 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F640J3F75A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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