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JS28F128P33TF70A

Micron Technology

JS28F128P33TF70A by Micron Technology

Micron Technology's JS28F128P33TF70A is a NOR flash memory with 8MX16 organization, 8388608 words capacity, and 16K/64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring high-density memory with fast access speeds.

Median Price

$7.351

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 800 parts In-Stock

1+ parts

$5.472

100+ parts

-

1k+ parts

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10k+ parts

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800

$5.472

-

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Component Electronics Inc.

Canada . 48 parts In-Stock

1+ parts

$9.230

100+ parts

$6.920

1k+ parts

$6.000

10k+ parts

-

48

$9.230

$6.920

$6.000

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Cyclops Electronics Ltd

UK . 22,472 parts In-Stock

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22,472

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Chip Stock

USA . 5,808 parts In-Stock

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5,808

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Vyrian

USA . 3,558 parts In-Stock

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3,558

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Digiode

USA . 2,389 parts In-Stock

1+ parts

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2,389

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Sternenhof Electronics

Switzerland . 2,304 parts In-Stock

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2,304

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Sensible Micro Corp

USA . 513 parts In-Stock

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513

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Touchstone Systems

USA . 192 parts In-Stock

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192

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Prism Electronics

USA . 23 parts In-Stock

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23

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Connect4Technologies Inc.

Canada . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 971 parts In-Stock

1+ parts

$2.315

100+ parts

-

1k+ parts

-

10k+ parts

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971

$2.315

-

-

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Advanced Electronics

New Zealand . 99 parts In-Stock

1+ parts

$2.940

100+ parts

$2.793

1k+ parts

$2.793

10k+ parts

-

99

$2.940

$2.793

$2.793

-

Aztec Data Supply Inc.

USA . 107 parts In-Stock

1+ parts

$4.170

100+ parts

-

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107

$4.170

-

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Component Stockers USA

USA . 397 parts In-Stock

1+ parts

$5.230

100+ parts

$4.970

1k+ parts

-

10k+ parts

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397

$5.230

$4.970

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AZTECH Wire

Italy . 704 parts In-Stock

1+ parts

$5.400

100+ parts

-

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704

$5.400

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Netroflash

USA . 50 parts In-Stock

1+ parts

$5.472

100+ parts

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50

$5.472

-

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Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$9.292

100+ parts

-

1k+ parts

$8.921

10k+ parts

$8.921

50

$9.292

-

$8.921

$8.921

Continental Prestige Electronics

USA . 2,524 parts In-Stock

1+ parts

$9.293

100+ parts

$9.200

1k+ parts

$8.921

10k+ parts

$8.921

2,524

$9.293

$9.200

$8.921

$8.921

Ampacity Inc.

Singapore . 441 parts In-Stock

1+ parts

$13.000

100+ parts

-

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441

$13.000

-

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Semicontronic

India . 1,103 parts In-Stock

1+ parts

$28.000

100+ parts

$27.300

1k+ parts

$27.160

10k+ parts

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1,103

$28.000

$27.300

$27.160

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 10,967 parts In-Stock

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RC Electronics

USA . 8,697 parts In-Stock

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8,697

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S.R.D Solutions

India . 7,997 parts In-Stock

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7,997

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A-Z Elektronik GmbH

Germany . 4,792 parts In-Stock

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4,792

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Corphita

USA . 2,085 parts In-Stock

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2,085

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Kepictronics

USA . 1,728 parts In-Stock

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1,728

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Argo Parts USA

USA . 781 parts In-Stock

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781

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Futuretech Components

Singapore . 556 parts In-Stock

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556

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$4.086

1k+ parts

$4.086

10k+ parts

$4.086

200

-

$4.086

$4.086

$4.086

Overview

Experience lightning-fast data storage and retrieval with the Micron Technology JS28F128P33TF70A Flash Memory. As a leader in memory solutions, Micron Technology ensures top-notch quality and reliability in all its products. This Flash Memory device is perfect for a wide range of applications, from consumer electronics to industrial equipment. With fast access times and low power consumption, this product provides exceptional value and performance. Trust Micron Technology to deliver cutting-edge technology that meets your needs effortlessly.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material makes the product durable and lightweight, ideal for portable devices.

Surface Mount:

YES - The surface mount feature allows for easy installation and compact design, saving space on circuit boards.

Package Shape:

RECTANGULAR - The rectangular shape of the package makes it easy to integrate into various electronic devices.

Operating Mode:

ASYNCHRONOUS - The asynchronous operating mode ensures efficient data transfer and access without the need for synchronization.

Nominal Supply Voltage / Vsup (V):

3 - The nominal supply voltage of 3V provides reliable power to the flash memory for consistent performance.

Power Supplies (V):

2.5/3.3 - The availability of multiple power supply options allows for compatibility with different systems and voltage requirements.

No. of Terminals:

56 - The 56 terminals provide ample connectivity options for versatile use in different applications.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - The small outline and thin profile design with shrink pitch enable space-saving in compact electronic devices.

Maximum Operating Temperature:

85 °C - The high maximum operating temperature ensures the flash memory can withstand intense usage conditions without overheating.

Organization:

8MX16 - The organization of 8Mx16 enhances data storage and retrieval efficiency for optimized performance.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature allows the flash memory to function reliably in cold environments.

No. of Sectors/Size:

4,127 - The high number of sectors and size provide ample storage capacity for a wide range of data and applications.

Technical Specifications

Flash Memory JS28F128P33TF70A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

8

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3,3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

28 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F128P33TF70A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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