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JS28F128J3F75A

Micron Technology

JS28F128J3F75A by Micron Technology

Micron Technology's JS28F128J3F75A is a NOR flash memory with 8MX16 organization, 128 sectors, and 8388608 words. Operating at -40 to 85°C, it has a standby current of 0.00012A and access time of 75ns. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

$6.000

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,336 parts In-Stock

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$6.000

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Nova Conductors

Japan . 50 parts In-Stock

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$5.561

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50

$5.561

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DF Sales Co.

USA . 40 parts In-Stock

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$8.900

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40

$8.900

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DF Sales Co.

USA . 40 parts In-Stock

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$8.900

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40

$8.900

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Chip Stock

USA . 22,785 parts In-Stock

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Bristol Electronics

USA . 20,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 18,512 parts In-Stock

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Vyrian

USA . 8,462 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Touchstone Systems

USA . 3,112 parts In-Stock

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Digiode

USA . 2,202 parts In-Stock

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Inventory MP

USA . 889 parts In-Stock

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Sogenti Electronics

Canada . 642 parts In-Stock

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PC Components Company LLC

USA . 352 parts In-Stock

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352

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Speed Components Ltd

Israel . 288 parts In-Stock

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288

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Goldney Electronics S.L.

Spain . 268 parts In-Stock

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EPE Components Inc.

USA . 117 parts In-Stock

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Atlantic Semiconductor

USA . 94 parts In-Stock

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Sensible Micro Corp

USA . 57 parts In-Stock

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ComSIT USA

USA . 43 parts In-Stock

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North Shore Components

USA . 15 parts In-Stock

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ComSIT Distribution GmbH

Germany . 11 parts In-Stock

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Prism Electronics

USA . 9 parts In-Stock

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Cogito LLC

Ukraine . 5 parts In-Stock

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5

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Carlin Systems, Inc.

USA . 4 parts In-Stock

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Velocity Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,138 parts In-Stock

1+ parts

$2.221

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$2.221

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Continental Prestige Electronics

USA . 4,921 parts In-Stock

1+ parts

$5.561

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$5.450

4,921

$5.561

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$5.450

Netroflash

USA . 100 parts In-Stock

1+ parts

$5.561

100+ parts

-

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$5.283

10k+ parts

$5.172

100

$5.561

-

$5.283

$5.172

Component Stockers USA

USA . 604 parts In-Stock

1+ parts

$99.990

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Perfect Parts

USA . 42,017 parts In-Stock

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GreenTree Electronics

Israel . 14,000 parts In-Stock

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RC Electronics

USA . 7,671 parts In-Stock

1+ parts

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$5.670

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$5.180

10k+ parts

$5.020

7,671

-

$5.670

$5.180

$5.020

S.R.D Solutions

India . 7,608 parts In-Stock

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7,608

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Kepictronics

USA . 6,288 parts In-Stock

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Epart123

USA . 5,000 parts In-Stock

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$4.040

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$4.040

Argo Parts USA

USA . 4,681 parts In-Stock

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4,681

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A-Z Elektronik GmbH

Germany . 3,821 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,240 parts In-Stock

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Corphita

USA . 1,457 parts In-Stock

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1,457

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Futuretech Components

Singapore . 700 parts In-Stock

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700

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Microchip USA

USA . 457 parts In-Stock

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457

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SIE Connect GmbH (Excess)

Germany . 282 parts In-Stock

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Computer Components Inc. - USA

USA . 74 parts In-Stock

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74

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Authorized Procurement Solutions

USA . 36 parts In-Stock

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ChipstoGo Electronic ltd

UK . 26 parts In-Stock

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iodParts Technologies Inc.

India . 8 parts In-Stock

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Overview

Experience seamless and reliable performance with the JS28F128J3F75A Flash Memory by Micron Technology. Crafted with precision and expertise, this product offers unparalleled quality and efficiency for a wide range of applications. Whether you're looking to enhance your computing experience or streamline your industrial processes, this flash memory delivers exceptional value, benefits, and advantages that cater to your unique needs. Trust in Micron Technology to provide you with cutting-edge technology that exceeds expectations. Elevate your performance today with the JS28F128J3F75A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the flash memory, making it long-lasting.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during production.

Operating Mode: ASYNCHRONOUS

Asynchronous operation ensures quick and responsive data transfer, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems and devices.

No. of Terminals: 56

With 56 terminals, this flash memory chip offers ample connectivity options for integrating into various electronic systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows the flash memory to function reliably even in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the flash memory chip can operate in extreme cold environments without issues.

Memory Density: 134217728 bit

High memory density of 134217728 bits allows for storing a large amount of data in a compact form factor, making it suitable for various applications.

Maximum Access Time: 75 ns

With a fast maximum access time of 75 nanoseconds, this flash memory chip offers quick access to stored data, enhancing system performance.

Technical Specifications

Flash Memory JS28F128J3F75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

128

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F128J3F75A Memory ICs trade compliance attributes, and parameters.

ECCN

3A991

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32

NSN

5962-01-640-8491, 5962016408491

NIIN

016408491

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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