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JS28F320J3F75A

Micron Technology

JS28F320J3F75A by Micron Technology

Micron Technology's JS28F320J3F75A is a NOR flash memory with 2MX16 organization, 32 sectors of 128K words each. Operating at -40 to 85 °C, it has a max access time of 75 ns and supports an industrial temperature grade. With a memory density of 33554432 bit, this flash memory is suitable for applications requiring fast data access and reliable performance in harsh environments.

Median Price

$6.008

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,912 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$3.015

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10

$3.015

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Voyager Components

USA . 36 parts In-Stock

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$9.000

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36

$9.000

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Chip Stock

USA . 13,569 parts In-Stock

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13,569

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Cyclops Electronics Ltd

UK . 12,529 parts In-Stock

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Vyrian

USA . 6,673 parts In-Stock

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Sternenhof Electronics

Switzerland . 2,304 parts In-Stock

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Digiode

USA . 1,712 parts In-Stock

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Bristol Electronics

USA . 1,063 parts In-Stock

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Touchstone Systems

USA . 836 parts In-Stock

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836

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J2 Sourcing AB

Sweden . 373 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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60

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Connect4Technologies Inc.

Canada . 49 parts In-Stock

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Lantek

USA . 23 parts In-Stock

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Quantum Digital Technology

USA . 2 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 121 parts In-Stock

1+ parts

$2.190

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121

$2.190

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Aztec Data Supply Inc.

USA . 2,232 parts In-Stock

1+ parts

$2.360

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2,232

$2.360

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Argo Parts USA

USA . 3,587 parts In-Stock

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$3.015

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3,587

$3.015

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Continental Prestige Electronics

USA . 1,423 parts In-Stock

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$3.015

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$2.955

1,423

$3.015

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$2.955

Netroflash

USA . 50 parts In-Stock

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$3.015

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50

$3.015

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Component Stockers USA

USA . 747 parts In-Stock

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$3.230

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$3.070

1k+ parts

$2.970

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747

$3.230

$3.070

$2.970

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Kepictronics

USA . 45,940 parts In-Stock

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S.R.D Solutions

India . 31,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 29,697 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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RC Electronics

USA . 14,219 parts In-Stock

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Perfect Parts

USA . 12,000 parts In-Stock

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GreenTree Electronics

Israel . 6,769 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,750 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,500 parts In-Stock

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Advanced Electronics

New Zealand . 1,300 parts In-Stock

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Corphita

USA . 307 parts In-Stock

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Microchip USA

USA . 295 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 60 parts In-Stock

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iodParts Technologies Inc.

India . 51 parts In-Stock

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Glotronic Ltd.

UK . 48 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the JS28F320J3F75A by Micron Technology. As a leader in memory solutions, Micron delivers cutting-edge technology that meets the demands of various applications. This compact and efficient Flash Memory device offers customers unmatched value, benefits, and advantages, making it the ideal choice for any project requiring fast and reliable data storage. Trust Micron Technology to provide the quality and performance you need for your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term storage.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, making it suitable for compact devices with limited space.

Package Shape: RECTANGULAR

The rectangular shape of the package offers compatibility with standard design layouts, ensuring ease of integration into various electronic systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent access to memory locations, enhancing speed and efficiency in data retrieval.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage ensures compatibility with a wide range of electronic devices, offering flexibility in usage.

Power Supplies (V): 3/3.3

The dual power supply options provide versatility in voltage requirements, catering to different system configurations.

No. of Terminals: 56

The ample number of terminals allows for secure connections and efficient data transfer, ensuring stability in performance.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and slim design of the package minimizes space usage, ideal for applications with size constraints.

Alternate Memory Width: 8

The option for an 8-bit memory width offers flexibility in data storage capacity, accommodating various storage requirements.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures reliability in extreme conditions, making it suitable for industrial and automotive applications.

Technical Specifications

Flash Memory JS28F320J3F75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

32

No. of Terminals:

56

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F320J3F75A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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