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JS28F128P30TF75A

Micron Technology

JS28F128P30TF75A by Micron Technology

Micron Technology's JS28F128P30TF75A is a NOR flash memory with 8MX16 organization, operating at 1.8V. It features synchronous operation, 8388608 words capacity, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,757 parts In-Stock

1+ parts

-

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1k+ parts

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4,757

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Chip Stock

USA . 3,060 parts In-Stock

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3,060

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Digiode

USA . 2,345 parts In-Stock

1+ parts

-

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2,345

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Maverick Electronics, Inc.

USA . 50 parts In-Stock

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50

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 143 parts In-Stock

1+ parts

$1.402

100+ parts

-

1k+ parts

$1.346

10k+ parts

$1.346

143

$1.402

-

$1.346

$1.346

AZTECH Wire

Italy . 287 parts In-Stock

1+ parts

$16.920

100+ parts

-

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287

$16.920

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Ampacity Inc.

Singapore . 815 parts In-Stock

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$21.000

100+ parts

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815

$21.000

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A-Z Elektronik GmbH

Germany . 6,704 parts In-Stock

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6,704

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Argo Parts USA

USA . 4,551 parts In-Stock

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4,551

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Alle Elektronik GmbH

Germany . 4,469 parts In-Stock

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4,469

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Continental Prestige Electronics

USA . 2,223 parts In-Stock

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2,223

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Corphita

USA . 1,772 parts In-Stock

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1,772

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Kepictronics

USA . 1,728 parts In-Stock

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1,728

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Perfect Parts

USA . 586 parts In-Stock

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586

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Microchip USA

USA . 232 parts In-Stock

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232

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of reliable and high-quality Flash Memory with the JS28F128P30TF75A by Micron Technology. As a leading manufacturer in the industry, Micron Technology brings you a versatile product that is perfect for a wide range of applications. Experience seamless operation, superior performance, and efficient data storage with this compact and innovative solution. Elevate your projects with the value, benefits, and advantages that only Micron Technology can deliver. Trust in the JS28F128P30TF75A to meet all your memory needs with precision and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the flash memory chip, ensuring its longevity.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, making it suitable for compact electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode enables faster data transfer speeds and improved efficiency in data processing.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation, contributing to energy efficiency.

No. of Terminals: 56

Having 56 terminals provides ample connection points for interfacing with other components in the system, ensuring reliable data transfer.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory chip can withstand demanding environmental conditions without compromising performance.

No. of Sectors/Size: 4,127

The large number of sectors and sizes available offer flexibility in data organization and storage management, catering to various memory allocation requirements.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high speed performance, making this flash memory chip ideal for battery-powered devices.

Maximum Standby Current: 0.000055 Amp

The extremely low standby current of 0.000055 Amp helps in conserving power when the chip is not actively being accessed, enhancing overall energy efficiency.

Maximum Access Time: 75 ns

The fast maximum access time of 75 nanoseconds ensures quick read and write operations, resulting in responsive and efficient data processing.

Technical Specifications

Flash Memory JS28F128P30TF75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

8

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000055 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F128P30TF75A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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