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JS28F256P30BF

Micron Technology

JS28F256P30BF by Micron Technology

Micron Technology's JS28F256P30BF is a NOR flash memory with 16Mx16 organization, operating at 40MHz. It features a small outline package, synchronous mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,100 parts In-Stock

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Vyrian

USA . 1,891 parts In-Stock

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1,891

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Digiode

USA . 1,457 parts In-Stock

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1,457

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Quantum Digital Technology

USA . 145 parts In-Stock

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145

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Nova Conductors

Japan . 87 parts In-Stock

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87

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BCID Electronics Ltd.

Israel . 40 parts In-Stock

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40

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SPM Sales

USA . 35 parts In-Stock

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Speed Components Ltd

Israel . 10 parts In-Stock

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PC Components Company LLC

USA . 1 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 558 parts In-Stock

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$25.000

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558

$25.000

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Andel Nordic

Denmark . 103 parts In-Stock

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$32.640

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$22.851

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$22.851

103

$32.640

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$22.851

$22.851

A-Z Elektronik GmbH

Germany . 4,887 parts In-Stock

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Argo Parts USA

USA . 4,439 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,213 parts In-Stock

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Continental Prestige Electronics

USA . 695 parts In-Stock

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695

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Aranea Global

USA . 500 parts In-Stock

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500

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Corphita

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Authorized Procurement Solutions

USA . 122 parts In-Stock

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ChipstoGo Electronic ltd

UK . 13 parts In-Stock

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Overview

Elevate your device's performance with the JS28F256P30BF by Micron Technology, a top-tier manufacturer in the industry. This flash memory provides unparalleled reliability and speed for a wide range of applications. With its cutting-edge technology and innovative design, this product offers exceptional value and benefits to customers seeking high-quality memory solutions. Upgrade your system with Micron Technology's JS28F256P30BF and experience enhanced efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it a reliable choice for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances the speed and efficiency of data transfer, making this flash memory suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage of 1.8V helps in reducing power consumption and extending battery life in devices using this flash memory.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory is suitable for industrial environments where temperature fluctuations may occur.

Technology: CMOS

CMOS technology enables low power consumption and high speed performance, making this flash memory a cost-effective and efficient choice.

Technical Specifications

Flash Memory JS28F256P30BF attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

110 ns

Additional Features:

ASYNCHRONOUS READ MODE

Boot Block:

BOTTOM

Maximum Clock Frequency (fCLK):

40 MHz

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

56

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F256P30BF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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