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MT25QL02GCBB8E12-0AAT

Micron Technology

MT25QL02GCBB8E12-0AAT by Micron Technology

MT25QL02GCBB8E12-0AAT by Micron Technology is a 256MX8 NOR flash memory with 3V supply voltage, operating at 133MHz. It offers 100000 write/erase cycles and SPI serial bus type for industrial applications requiring high endurance and fast data transfer.

Median Price

$36.847

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,039 parts In-Stock

1+ parts

$25.160

100+ parts

$21.560

1k+ parts

$20.930

10k+ parts

-

3,039

$25.160

$21.560

$20.930

-

Farnell

UK . 559 parts In-Stock

1+ parts

$36.847

100+ parts

$29.755

1k+ parts

-

10k+ parts

-

559

$36.847

$29.755

-

-

Verical

USA . 2,244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$37.373

2,244

-

-

-

$37.373

EBV Elektronik

Germany . 1,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,122

-

-

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 195 parts In-Stock

1+ parts

$20.264

100+ parts

-

1k+ parts

-

10k+ parts

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195

$20.264

-

-

-

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$36.195

100+ parts

-

1k+ parts

-

10k+ parts

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600

$36.195

-

-

-

Chip Stock

USA . 10,300 parts In-Stock

1+ parts

-

100+ parts

-

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10,300

-

-

-

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Vyrian

USA . 3,433 parts In-Stock

1+ parts

-

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3,433

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-

-

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NAC Semi

USA . 1,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$36.850

1,423

-

-

-

$36.850

ARCO, INC.

USA . 935 parts In-Stock

1+ parts

-

100+ parts

-

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935

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Bristol Electronics

USA . 49 parts In-Stock

1+ parts

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49

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 244 parts In-Stock

1+ parts

$3.830

100+ parts

-

1k+ parts

-

10k+ parts

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244

$3.830

-

-

-

Semicontronic

India . 939 parts In-Stock

1+ parts

$15.570

100+ parts

$15.181

1k+ parts

$15.103

10k+ parts

-

939

$15.570

$15.181

$15.103

-

Ampacity Inc.

Singapore . 899 parts In-Stock

1+ parts

$15.570

100+ parts

-

1k+ parts

-

10k+ parts

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899

$15.570

-

-

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Corphita

USA . 2,164 parts In-Stock

1+ parts

$19.197

100+ parts

-

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10k+ parts

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2,164

$19.197

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Continental Prestige Electronics

USA . 943 parts In-Stock

1+ parts

$34.220

100+ parts

-

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943

$34.220

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$35.471

100+ parts

-

1k+ parts

$34.052

10k+ parts

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100

$35.471

-

$34.052

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Corohmni

South Africa . 320 parts In-Stock

1+ parts

$37.980

100+ parts

-

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10k+ parts

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320

$37.980

-

-

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$39.119

100+ parts

$37.163

1k+ parts

$37.163

10k+ parts

-

5,000

$39.119

$37.163

$37.163

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S.R.D Solutions

India . 5,000 parts In-Stock

1+ parts

-

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5,000

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Argo Parts USA

USA . 2,356 parts In-Stock

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2,356

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Perfect Parts

USA . 1,363 parts In-Stock

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1,363

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Infinite Electronics LLP (Excess)

. 1,005 parts In-Stock

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1,005

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RC Electronics

USA . 800 parts In-Stock

1+ parts

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800

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Speed Components Ltd (Excess)

Israel . 4 parts In-Stock

1+ parts

-

100+ parts

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4

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-

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Overview

Experience the next level of reliability and performance with Micron Technology's MT25QL02GCBB8E12-0AAT Flash Memory. Designed with cutting-edge technology and top-notch quality, this product offers unparalleled value and benefits to customers in various applications. Whether you're looking for high-speed data storage solutions or need a reliable memory device for industrial use, this Flash Memory delivers exceptional endurance, speed, and versatility. Trust Micron Technology to provide you with the best-in-class memory solutions for all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material is durable and reliable, ensuring the longevity of the flash memory product.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and more efficient performance compared to asynchronous operation.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The flash memory can operate in extremely low temperatures, making it suitable for a wide range of applications.

No. of Words: 268435456 words

With a high number of words, this flash memory product offers ample storage capacity for data-intensive applications.

Memory Density: 2147483648 bit

High memory density allows for storing large amounts of data in a compact form factor, making this flash memory an efficient storage solution.

Technical Specifications

Flash Memory MT25QL02GCBB8E12-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Boot Block:

BOTTOM/TOP

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00028 Amp

Maximum Supply Current:

85 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL02GCBB8E12-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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