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MT25QL128ABA1EW9-0SITTR

Micron Technology

MT25QL128ABA1EW9-0SITTR by Micron Technology

Micron Technology's MT25QL128ABA1EW9-0SITTR is a 128Mbit flash memory with synchronous operation, 133MHz clock frequency, and 100000 write/erase cycles. Ideal for industrial applications requiring high endurance and reliable data storage in a compact package.

Median Price

$2.430

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 18,823 parts In-Stock

1+ parts

$2.460

100+ parts

$2.130

1k+ parts

$1.970

10k+ parts

$1.890

18,823

$2.460

$2.130

$1.970

$1.890

Arrow

USA . 1,760 parts In-Stock

1+ parts

$3.257

100+ parts

$2.399

1k+ parts

$2.016

10k+ parts

-

1,760

$3.257

$2.399

$2.016

-

Future Electronics

Canada . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.330

20,000

-

-

-

$1.330

Verical

USA . 1,760 parts In-Stock

1+ parts

-

100+ parts

$2.399

1k+ parts

$2.016

10k+ parts

-

1,760

-

$2.399

$2.016

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 209 parts In-Stock

1+ parts

$3.094

100+ parts

-

1k+ parts

-

10k+ parts

-

209

$3.094

-

-

-

Nova Conductors

Japan . 46 parts In-Stock

1+ parts

$5.932

100+ parts

-

1k+ parts

-

10k+ parts

-

46

$5.932

-

-

-

Vyrian

USA . 10,453 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,453

-

-

-

-

Chip Stock

USA . 9,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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9,120

-

-

-

-

Infinite Electronics LLP

India . 1,443 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,443

-

-

-

-

SPM Sales

USA . 268 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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268

-

-

-

-

Sensible Micro Corp

USA . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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60

-

-

-

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Bristol Electronics

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,066 parts In-Stock

1+ parts

$2.040

100+ parts

$1.989

1k+ parts

$1.979

10k+ parts

-

16,066

$2.040

$1.989

$1.979

-

Ampacity Inc.

Singapore . 8,925 parts In-Stock

1+ parts

$2.040

100+ parts

-

1k+ parts

-

10k+ parts

-

8,925

$2.040

-

-

-

Corphita

USA . 2,037 parts In-Stock

1+ parts

$2.931

100+ parts

-

1k+ parts

-

10k+ parts

-

2,037

$2.931

-

-

-

Argo Parts USA

USA . 4,727 parts In-Stock

1+ parts

$3.296

100+ parts

-

1k+ parts

-

10k+ parts

-

4,727

$3.296

-

-

-

Continental Prestige Electronics

USA . 4,451 parts In-Stock

1+ parts

$3.296

100+ parts

-

1k+ parts

-

10k+ parts

$3.230

4,451

$3.296

-

-

$3.230

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$4.653

100+ parts

$4.420

1k+ parts

$4.420

10k+ parts

-

100

$4.653

$4.420

$4.420

-

Aztec Data Supply Inc.

USA . 2,676 parts In-Stock

1+ parts

$5.150

100+ parts

-

1k+ parts

-

10k+ parts

-

2,676

$5.150

-

-

-

Corohmni

South Africa . 845 parts In-Stock

1+ parts

$5.979

100+ parts

-

1k+ parts

-

10k+ parts

-

845

$5.979

-

-

-

GreenTree Electronics

Israel . 39,303 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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39,303

-

-

-

-

Glotronic Ltd.

UK . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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16,000

-

-

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Perfect Parts

USA . 7,484 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,484

-

-

-

-

Epart123

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$19.200

10k+ parts

$19.200

4,000

-

-

$19.200

$19.200

Infinite Electronics LLP (Excess)

. 2,194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,194

-

-

-

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Lucentia Tech

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$0.076

1k+ parts

$0.076

10k+ parts

$0.076

600

-

$0.076

$0.076

$0.076

Robosynatics

Brazil . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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300

-

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$5.813

1k+ parts

$5.635

10k+ parts

$5.517

100

-

$5.813

$5.635

$5.517

Modulus Dynamics

Lithuania . 19 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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19

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the MT25QL128ABA1EW9-0SITTR by Micron Technology. Designed with precision and reliability in mind, this flash memory device offers endless possibilities for your electronic projects. Whether you're looking to enhance the performance of your industrial applications or streamline data storage in your devices, this product delivers unparalleled value and efficiency. Trust Micron Technology to provide top-notch quality and innovation, making your experience seamless and productive. Elevate your technology game with the MT25QL128ABA1EW9-0SITTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving design, making it suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape is efficient for fitting into compact devices, maximizing space utilization.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures high-speed data transfer, making this flash memory ideal for quick data access.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage is standard and widely compatible, ensuring seamless integration with different systems.

No. of Terminals: 8

With 8 terminals, this flash memory provides versatile connectivity options for various devices.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and thin profile design enhances thermal management and ensures efficient performance in limited space.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for reliable performance in a range of environmental conditions.

Organization: 128MX1

The organization of 128MX1 offers high memory density and efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures functionality even in extreme cold environments.

Terminal Position: DUAL

The dual terminal position offers stability and reliability, ensuring secure connections for data transfer.

Write Protection: HARDWARE/SOFTWARE

The option for hardware/software write protection enhances security and data integrity for the flash memory.

Maximum Seated Height: 0.8 mm

The low seated height allows for easy integration in slim devices without compromising on performance.

Maximum Clock Frequency (fCLK): 133 MHz

The high clock frequency enables fast data processing and swift access to stored information.

Width: 6 mm

The compact width makes this flash memory suitable for space-constrained applications while maintaining performance.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage ensures energy efficiency and compatibility with a range of power sources.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures safe and reliable soldering during installation.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures secure solder connections for robust performance.

Length: 8 mm

The moderate length of the flash memory allows for easy integration and versatile placement in electronic devices.

Programming Voltage (V): 3

The programming voltage of 3V enables efficient data programming, ensuring quick and reliable data storage.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliability and functionality in harsh operating conditions.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption, extending the device's battery life.

Parallel or Serial: SERIAL

The serial interface enables efficient data transfer and communication between the flash memory and external devices.

Terminal Form: NO LEAD

The no-lead terminal form simplifies installation and ensures secure connections for optimal performance.

Maximum Supply Current: 35 mA

The maximum supply current of 35 mA ensures efficient energy consumption and compatibility with various power sources.

No. of Words: 134217728 words

With a high number of words, this flash memory provides ample storage capacity for large data files and applications.

Minimum Data Retention Time: 20

The minimum data retention time of 20 years ensures long-term data storage without loss or corruption.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm offers convenient connectivity and compatibility with standard electronic components.

No. of Words Code: 128M

The code for 128M words offers a clear indication of the memory capacity and storage capabilities of this flash memory.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V ensures stable operation and protection against voltage fluctuations.

Endurance: 100000 Write/Erase Cycles

The high endurance rating of 100,000 write/erase cycles ensures long-lasting performance and data reliability for frequent usage.

Memory Density: 134217728 bit

The high memory density of 134,217,728 bits provides ample storage space for large volumes of data and applications.

Memory IC Type: FLASH

The flash memory IC type offers fast data access and efficient storage capabilities for quick and reliable performance.

Maximum Standby Current: 0.00005 Amp

The low maximum standby current ensures minimal power consumption during idle periods, saving energy and extending battery life.

Technical Specifications

Flash Memory MT25QL128ABA1EW9-0SITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.2

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

.8 mm

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL128ABA1EW9-0SITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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