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PC28F128P33BF60A

Micron Technology

PC28F128P33BF60A by Micron Technology

Micron Technology's PC28F128P33BF60A is a 8MX16 NOR flash memory with 64 terminals. Operating at 3V, it offers 134217728 bits of memory density and supports synchronous mode. With a temperature range of -40 to 85°C, it is ideal for industrial applications requiring fast access times and low standby current.

Median Price

$4.110

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 547 parts In-Stock

1+ parts

$4.110

100+ parts

-

1k+ parts

$3.560

10k+ parts

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547

$4.110

-

$3.560

-

Distributors (In-Stock)

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Digiode

USA . 285 parts In-Stock

1+ parts

$3.904

100+ parts

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285

$3.904

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EXC GmbH

Germany . 1,800 parts In-Stock

1+ parts

$4.316

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1,800

$4.316

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Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$5.180

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58

$5.180

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Kruse

Germany . 46,800 parts In-Stock

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46,800

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Kruse Electronics AG

Switzerland . 43,200 parts In-Stock

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43,200

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Chip Stock

USA . 24,000 parts In-Stock

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Sensible Micro Corp

USA . 19,800 parts In-Stock

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19,800

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Sea View Technologies

USA . 5,514 parts In-Stock

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5,514

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Cyclops Electronics Ltd

UK . 4,859 parts In-Stock

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4,859

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Vyrian

USA . 4,811 parts In-Stock

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4,811

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Bristol Electronics

USA . 1,804 parts In-Stock

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1,804

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Atlantic Semiconductor

USA . 4 parts In-Stock

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4

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Semi Source

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,089 parts In-Stock

1+ parts

$2.339

100+ parts

-

1k+ parts

$2.246

10k+ parts

$2.246

3,089

$2.339

-

$2.246

$2.246

Ampacity Inc.

Singapore . 320 parts In-Stock

1+ parts

$3.490

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320

$3.490

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Semicontronic

India . 99 parts In-Stock

1+ parts

$3.490

100+ parts

$3.403

1k+ parts

$3.385

10k+ parts

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99

$3.490

$3.403

$3.385

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Corphita

USA . 1,264 parts In-Stock

1+ parts

$3.699

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1,264

$3.699

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Component Stockers USA

USA . 3,485 parts In-Stock

1+ parts

$4.870

100+ parts

$4.480

1k+ parts

$4.180

10k+ parts

-

3,485

$4.870

$4.480

$4.180

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Continental Prestige Electronics

USA . 6,979 parts In-Stock

1+ parts

$5.180

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$5.076

6,979

$5.180

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$5.076

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$5.180

100+ parts

$4.921

1k+ parts

$4.675

10k+ parts

$4.610

300

$5.180

$4.921

$4.675

$4.610

Corohmni

South Africa . 236 parts In-Stock

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$5.180

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236

$5.180

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$5.335

100+ parts

$5.069

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$5.069

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40

$5.335

$5.069

$5.069

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Aztec Data Supply Inc.

USA . 915 parts In-Stock

1+ parts

$5.740

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915

$5.740

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AZTECH Wire

Italy . 292 parts In-Stock

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$15.080

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Perfect Parts

USA . 137,155 parts In-Stock

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RC Electronics

USA . 10,043 parts In-Stock

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Argo Parts USA

USA . 4,073 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Kepictronics

USA . 1,800 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 1,800 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of high-quality, reliable Flash Memory with the PC28F128P33BF60A by Micron Technology. Manufactured by a trusted industry leader, this product offers unparalleled value and benefits to customers in need of fast and efficient memory solutions. Ideal for industrial applications, this Flash Memory boasts a wide operating temperature range and a robust design, ensuring exceptional performance in any environment. Experience the advantage of Micron Technology's cutting-edge technology with the PC28F128P33BF60A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and lightweight, making the product suitable for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient use of power.

Nominal Supply Voltage / Vsup (V): 3

Standard supply voltage ensures compatibility with most systems.

No. of Terminals: 64

Sufficient number of terminals for reliable connectivity and data transfer.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for use in a variety of environments.

Organization: 8MX16

Organized in 8MX16 configuration for efficient data storage and retrieval.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures ensures product reliability in extreme conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Tin/silver/copper finish on terminals provides strong electrical connections.

Memory Density: 134217728 bit

High memory density allows for storage of large amounts of data.

Maximum Access Time: 60 ns

Fast access time ensures quick retrieval of stored data.

Technical Specifications

Flash Memory PC28F128P33BF60A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

60 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

28 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

PC28F128P33BF60A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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