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PC28F640P33BF60A

Micron Technology

PC28F640P33BF60A by Micron Technology

Micron Technology's PC28F640P33BF60A is a 64-terminal NOR flash memory with 4MX16 organization, operating at 3V. With a page size of 8 words and sector sizes of 16K and 64K words, it offers fast access time of 60ns. Ideal for industrial applications requiring high memory density and common flash interface.

Median Price

$4.362

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 28 parts In-Stock

1+ parts

$4.362

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28

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Chip Stock

USA . 6,900 parts In-Stock

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6,900

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Cyclops Electronics Ltd

UK . 3,600 parts In-Stock

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3,600

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Digiode

USA . 2,308 parts In-Stock

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2,308

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Kruse Electronics AG

Switzerland . 1,800 parts In-Stock

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1,800

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Kruse

Germany . 1,800 parts In-Stock

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Vyrian

USA . 1,632 parts In-Stock

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Bristol Electronics

USA . 100 parts In-Stock

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100

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Legend Electronics Inc.

USA . 19 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 888 parts In-Stock

1+ parts

$3.877

100+ parts

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888

$3.877

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Continental Prestige Electronics

USA . 6,102 parts In-Stock

1+ parts

$4.362

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$4.275

6,102

$4.362

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$4.275

Argo Parts USA

USA . 2,005 parts In-Stock

1+ parts

$4.362

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2,005

$4.362

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Aztec Data Supply Inc.

USA . 3,191 parts In-Stock

1+ parts

$4.837

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3,191

$4.837

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AZTECH Wire

Italy . 276 parts In-Stock

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$11.447

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276

$11.447

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Semicontronic

India . 711 parts In-Stock

1+ parts

$18.000

100+ parts

$17.550

1k+ parts

$17.460

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711

$18.000

$17.550

$17.460

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Ampacity Inc.

Singapore . 1,533 parts In-Stock

1+ parts

$27.000

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Kepictronics

USA . 21,310 parts In-Stock

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RC Electronics

USA . 18,124 parts In-Stock

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$1.830

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$1.730

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$1.690

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$1.830

$1.730

$1.690

Perfect Parts

USA . 17,675 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,794 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 2,900 parts In-Stock

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Microchip USA

USA . 2,218 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$4.275

1k+ parts

$4.144

10k+ parts

$4.057

2,000

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$4.275

$4.144

$4.057

Futuretech Components

Singapore . 1,800 parts In-Stock

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Authorized Procurement Solutions

USA . 1,800 parts In-Stock

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Corphita

USA . 893 parts In-Stock

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893

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Speed Components Ltd (Excess)

Israel . 10 parts In-Stock

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10

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Overview

Unlock the power of reliable and efficient data storage with the Micron Technology PC28F640P33BF60A Flash Memory. Manufactured by a trusted leader in memory solutions, this product offers unparalleled quality and performance. Ideal for industrial applications, this flash memory provides fast access times and low power consumption, ensuring optimal functionality. With its advanced technology and versatile design, the PC28F640P33BF60A is the perfect solution for your storage needs. Upgrade to Micron Technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material is lightweight, durable, and cost-effective, making the product easy to handle and transport.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write operations, enhancing the speed and efficiency of data transfers.

Nominal Supply Voltage (Vsup): 3V

Operating at a standard voltage of 3V ensures compatibility with a wide range of devices and power sources.

No. of Terminals: 64

Having 64 terminals provides a high level of connectivity and compatibility with various systems and interfaces.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature of 85°C, the product can withstand demanding environmental conditions and extended usage.

Memory IC Type: FLASH

Being a FLASH memory IC, the product offers high-speed read and write operations, making it suitable for applications that require fast data access.

Technical Specifications

Flash Memory PC28F640P33BF60A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

60 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,63

No. of Terminals:

64

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

28 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

PC28F640P33BF60A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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