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PC28F640P30BF65A

Micron Technology

PC28F640P30BF65A by Micron Technology

Micron Technology's PC28F640P30BF65A is a 64-terminal NOR flash memory with 4Mx16 organization, operating b/w -40 to 85°C. It features a page size of 8 words, sector sizes of 16K and 64K words, and a memory density of 67108864 bits. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

$5.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,320 parts In-Stock

1+ parts

-

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$5.000

10k+ parts

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4,320

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$5.000

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Distributors (In-Stock)

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Nova Conductors

Japan . 68 parts In-Stock

1+ parts

$6.150

100+ parts

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68

$6.150

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Chip Stock

USA . 21,500 parts In-Stock

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21,500

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Sensible Micro Corp

USA . 6,912 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,687 parts In-Stock

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4,687

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ARCO, INC.

USA . 4,320 parts In-Stock

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4,320

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Vyrian

USA . 3,901 parts In-Stock

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3,901

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Digiode

USA . 1,529 parts In-Stock

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1,529

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Bristol Electronics

USA . 7 parts In-Stock

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7

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Atlantic Semiconductor

USA . 7 parts In-Stock

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7

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,305 parts In-Stock

1+ parts

$4.250

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-

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4,305

$4.250

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Continental Prestige Electronics

USA . 1,760 parts In-Stock

1+ parts

$6.150

100+ parts

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$6.027

1,760

$6.150

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$6.027

Netroflash

USA . 50 parts In-Stock

1+ parts

$6.150

100+ parts

$6.027

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50

$6.150

$6.027

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Component Stockers USA

USA . 1,045 parts In-Stock

1+ parts

$6.540

100+ parts

$6.210

1k+ parts

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10k+ parts

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1,045

$6.540

$6.210

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Andel Nordic

Denmark . 5,991 parts In-Stock

1+ parts

$7.149

100+ parts

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$6.863

10k+ parts

$6.863

5,991

$7.149

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$6.863

$6.863

A-Z Elektronik GmbH

Germany . 7,805 parts In-Stock

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7,805

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RC Electronics

USA . 5,293 parts In-Stock

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5,293

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Sternenhof Electronics (Excess)

Switzerland . 2,952 parts In-Stock

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2,952

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Argo Parts USA

USA . 2,572 parts In-Stock

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2,572

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Perfect Parts

USA . 2,246 parts In-Stock

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Microchip USA

USA . 1,812 parts In-Stock

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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Corphita

USA . 1,148 parts In-Stock

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1,148

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GreenTree Electronics

Israel . 864 parts In-Stock

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864

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Overview

Discover the power of Micron Technology's PC28F640P30BF65A Flash Memory, a cutting-edge solution designed to elevate your electronic devices to the next level. With its high-quality construction and advanced technology, this product offers unmatched performance and reliability. Ideal for a wide range of applications, this flash memory delivers lightning-fast data access and storage capabilities. Experience the value and benefits of Micron Technology's expertise with the PC28F640P30BF65A, and take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it long-lasting and resistant to damage.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation onto circuit boards, saving time and effort during assembly.

Power Supplies (V): 1.8,1.8/3.3

Multiple power supply options provide flexibility in compatibility with different systems, ensuring seamless integration with various devices.

No. of Terminals: 64

Having 64 terminals allows for efficient data transfer and communication between the flash memory and the device it is installed in.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand harsh environmental conditions, making it ideal for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance, enhancing the efficiency and reliability of the flash memory.

No. of Words: 4194304 words

With a high number of words, this flash memory offers large storage capacity, allowing for storing a vast amount of data and information.

Memory IC Type: FLASH

Being a flash memory IC type, this product provides non-volatile storage, ensuring data retention even when power is disconnected.

Technical Specifications

Flash Memory PC28F640P30BF65A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

65 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

S-PBGA-B64

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

4,63

No. of Terminals:

64

No. of Words:

4194304 words

No. of Words Code:

4M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000055 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

PC28F640P30BF65A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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