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PC28F128G18FE

Micron Technology

PC28F128G18FE by Micron Technology

Micron Technology's PC28F128G18FE is a 1.8V NOR Flash Memory with 8MX16 organization, 128K sector size, and 8388608 words capacity. Operating in synchronous mode with a programming voltage of 2.7V, it offers fast access time of 96ns. Ideal for applications requiring high-density memory storage and common flash interface integration.

Median Price

$2.372

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$2.372

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$2.372

-

-

-

Chip Stock

USA . 22,200 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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22,200

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Vyrian

USA . 6,846 parts In-Stock

1+ parts

-

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6,846

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Digiode

USA . 2,308 parts In-Stock

1+ parts

-

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1k+ parts

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2,308

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,102 parts In-Stock

1+ parts

$2.372

100+ parts

-

1k+ parts

-

10k+ parts

$2.325

1,102

$2.372

-

-

$2.325

Argo Parts USA

USA . 347 parts In-Stock

1+ parts

$2.372

100+ parts

-

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347

$2.372

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Netroflash

USA . 100 parts In-Stock

1+ parts

$2.372

100+ parts

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100

$2.372

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Semicontronic

India . 1,314 parts In-Stock

1+ parts

$16.000

100+ parts

$15.600

1k+ parts

$15.520

10k+ parts

-

1,314

$16.000

$15.600

$15.520

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AZTECH Wire

Italy . 703 parts In-Stock

1+ parts

$16.610

100+ parts

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703

$16.610

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QUARKTWIN TECHNOLOGY LTD

USA . 19,450 parts In-Stock

1+ parts

-

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19,450

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Microchip USA

USA . 3,041 parts In-Stock

1+ parts

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3,041

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Corphita

USA . 1,262 parts In-Stock

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1,262

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Overview

Unleash the power of cutting-edge technology with Micron Technology's PC28F128G18FE Flash Memory. Designed to deliver unmatched performance and reliability, this innovative product is a game-changer in the tech industry. With a wide range of applications and top-notch quality, Micron Technology sets the standard for excellence in the field of memory solutions. Elevate your devices with the seamless integration and unparalleled benefits that the PC28F128G18FE Flash Memory provides. Experience the difference and stay ahead of the curve with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body ensures the product is sturdy and easy to handle.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances the efficiency and speed of data transfer.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption and enhancing energy efficiency.

No. of Terminals: 64

Sufficient number of terminals for connectivity and data transfer requirements.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows usage in various environmental conditions.

Memory Density: 134217728 bit

High memory density provides ample storage capacity for data and information.

Maximum Access Time: 96 ns

Fast access time ensures quick read and write operations, improving overall performance.

Technical Specifications

Flash Memory PC28F128G18FE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

96 ns

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

64

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.000115 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

PC28F128G18FE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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