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PC28F00AM29EWHA

Micron Technology

PC28F00AM29EWHA by Micron Technology

Micron Technology's PC28F00AM29EWHA is a NOR flash memory with 64MX16 organization, operating at 3V. It features a 1K sector size, 128K word sector size, and offers an industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

Median Price

$5.748

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$5.748

100+ parts

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100

$5.748

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Digiode

USA . 2,334 parts In-Stock

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2,334

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Vyrian

USA . 1,474 parts In-Stock

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1,474

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Cyclops Electronics Ltd

UK . 1,162 parts In-Stock

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Speed Components Ltd

Israel . 338 parts In-Stock

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338

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Semtec, LLC

USA . 142 parts In-Stock

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142

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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20

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Prism Electronics

USA . 7 parts In-Stock

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7

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First Choice Components Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,355 parts In-Stock

1+ parts

$3.190

100+ parts

-

1k+ parts

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1,355

$3.190

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$3.357

100+ parts

$3.055

1k+ parts

$2.753

10k+ parts

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350

$3.357

$3.055

$2.753

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$5.588

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72

$5.588

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Continental Prestige Electronics

USA . 684 parts In-Stock

1+ parts

$5.748

100+ parts

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10k+ parts

$5.633

684

$5.748

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$5.633

Netroflash

USA . 50 parts In-Stock

1+ parts

$5.748

100+ parts

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1k+ parts

$5.461

10k+ parts

$5.346

50

$5.748

-

$5.461

$5.346

AZTECH Wire

Italy . 233 parts In-Stock

1+ parts

$10.608

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233

$10.608

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Ampacity Inc.

Singapore . 611 parts In-Stock

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$12.000

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611

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Perfect Parts

USA . 14,336 parts In-Stock

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RC Electronics

USA . 7,528 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,468 parts In-Stock

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2,468

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Kepictronics

USA . 1,800 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,665 parts In-Stock

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1,665

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Corphita

USA . 1,502 parts In-Stock

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Argo Parts USA

USA . 1,448 parts In-Stock

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Microchip USA

USA . 233 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 20 parts In-Stock

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Overview

Experience the superior quality and reliability of Micron Technology with the PC28F00AM29EWHA Flash Memory. Designed for a wide range of applications, this product offers unmatched value and benefits to customers looking for high-performance memory solutions. With its advanced technology and industrial-grade design, the PC28F00AM29EWHA delivers fast access times and low power consumption, making it an ideal choice for demanding projects. Trust in Micron Technology to provide you with the cutting-edge memory solution you need for your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape provides compatibility with standard mounting systems and saves space in electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables the flash memory to perform tasks independently, increasing efficiency.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage ensures compatibility with a wide range of electronic devices.

Power Supplies (V): 3/3.3

The dual power supply options allow for flexibility in voltage requirements, making it suitable for different applications.

No. of Terminals: 64

The 64 terminals provide multiple connection options for seamless integration into electronic systems.

Package Style (Meter): GRID ARRAY, LOW PROFILE

The grid array, low profile package style offers a compact design and efficient heat dissipation.

Alternate Memory Width: 8

The alternate memory width of 8 enhances data transfer speed and performance.

Maximum Operating Temperature: 85 °C

The maximum operating temperature of 85°C ensures reliable performance in various environmental conditions.

Technical Specifications

Flash Memory PC28F00AM29EWHA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

64

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Page Size (words):

16/32

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.4 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00024 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11 mm

Trade Compliance

PC28F00AM29EWHA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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