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PC28F256P33TFE

Micron Technology

PC28F256P33TFE by Micron Technology

Micron Technology's PC28F256P33TFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes for industrial applications. With a max operating temperature of 85°C, this thin-profile grid array package has a parallel interface and supports common flash commands.

Median Price

$7.156

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10 parts In-Stock

1+ parts

$4.792

100+ parts

-

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10

$4.792

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DigiKey

USA . 1,508 parts In-Stock

1+ parts

$9.520

100+ parts

$8.185

1k+ parts

$7.669

10k+ parts

$7.499

1,508

$9.520

$8.185

$7.669

$7.499

Verical

USA . 10 parts In-Stock

1+ parts

-

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10

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Distributors (In-Stock)

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Digiode

USA . 1,059 parts In-Stock

1+ parts

$4.552

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1,059

$4.552

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Flip Electronics

USA . 176 parts In-Stock

1+ parts

$5.410

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176

$5.410

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Nova Conductors

Japan . 36 parts In-Stock

1+ parts

$9.589

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36

$9.589

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Kruse

Germany . 56,160 parts In-Stock

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56,160

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Kruse Electronics AG

Switzerland . 15,552 parts In-Stock

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15,552

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ARCO, INC.

USA . 12,000 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 2,388 parts In-Stock

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Velocity Electronics

USA . 864 parts In-Stock

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North Shore Components

USA . 864 parts In-Stock

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864

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Rebound Electronics

UK . 544 parts In-Stock

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544

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Microfarads

USA . 172 parts In-Stock

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172

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LIBRA Elektronik GmbH

Germany . 160 parts In-Stock

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160

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Vyrian

USA . 7 parts In-Stock

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7

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Connector Distribution Corp

USA . 3 parts In-Stock

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3

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Right Parts Inc.

USA . 3 parts In-Stock

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3

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Bristol Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 17 parts In-Stock

1+ parts

$2.840

100+ parts

-

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17

$2.840

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Aztec Data Supply Inc.

USA . 4,936 parts In-Stock

1+ parts

$2.870

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4,936

$2.870

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$3.757

100+ parts

$3.419

1k+ parts

$3.081

10k+ parts

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40

$3.757

$3.419

$3.081

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Ampacity Inc.

Singapore . 7 parts In-Stock

1+ parts

$4.070

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7

$4.070

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Semicontronic

India . 7 parts In-Stock

1+ parts

$4.070

100+ parts

$3.968

1k+ parts

$3.948

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7

$4.070

$3.968

$3.948

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Corphita

USA . 2,136 parts In-Stock

1+ parts

$4.313

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2,136

$4.313

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Component Stockers USA

USA . 2,171 parts In-Stock

1+ parts

$4.650

100+ parts

$6.250

1k+ parts

$5.780

10k+ parts

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2,171

$4.650

$6.250

$5.780

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Continental Prestige Electronics

USA . 5,903 parts In-Stock

1+ parts

$9.589

100+ parts

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$9.397

5,903

$9.589

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$9.397

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$9.589

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2,000

$9.589

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AZTECH Wire

Italy . 311 parts In-Stock

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$18.552

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311

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Perfect Parts

USA . 9,972 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,687 parts In-Stock

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RC Electronics

USA . 6,343 parts In-Stock

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Argo Parts USA

USA . 4,337 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 3,456 parts In-Stock

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3,456

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,246 parts In-Stock

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Kepictronics

USA . 1,728 parts In-Stock

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1,728

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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1,000

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Legend Electronics Inc. (Excess)

USA . 1,000 parts In-Stock

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1,000

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Overview

Discover the top-quality PC28F256P33TFE by Micron Technology, a cutting-edge Flash Memory device with endless applications. Manufactured with excellence in mind, this product boasts superior performance and reliability. From industrial to consumer electronics, this versatile memory solution offers unmatched value and benefits, empowering customers with high-speed data storage and seamless operation. Upgrade your devices today with Micron Technology's innovative Flash Memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the product lightweight and durable, ideal for portable devices.

No. of Terminals: 64

Having 64 terminals allows for efficient data transfer and connectivity.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliability in various working environments.

Organization: 16MX16

The 16MX16 organization offers a high memory capacity, suitable for storing large amounts of data.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance.

Technical Specifications

Flash Memory PC28F256P33TFE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

Additional Features:

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F256P33TFE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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