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PC28F256P30TFE

Micron Technology

PC28F256P30TFE by Micron Technology

Micron Technology's PC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, 16K/64K sector sizes, and a common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Chip Stock

USA . 3,707 parts In-Stock

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Semi Source

USA . 3,583 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,947 parts In-Stock

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Vyrian

USA . 2,388 parts In-Stock

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Digiode

USA . 2,136 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Touchstone Systems

USA . 18 parts In-Stock

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Netsource Technology, Inc.

USA . 5 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 103 parts In-Stock

1+ parts

$2.862

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103

$2.862

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Aztec Data Supply Inc.

USA . 281 parts In-Stock

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$4.469

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$4.469

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AZTECH Wire

Italy . 539 parts In-Stock

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$13.127

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Ampacity Inc.

Singapore . 185 parts In-Stock

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$28.000

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$28.000

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Component Stockers USA

USA . 526 parts In-Stock

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$32.070

100+ parts

$30.470

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$30.470

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,503 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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Continental Prestige Electronics

USA . 4,669 parts In-Stock

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Argo Parts USA

USA . 3,558 parts In-Stock

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RC Electronics

USA . 3,505 parts In-Stock

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Perfect Parts

USA . 2,266 parts In-Stock

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Kepictronics

USA . 1,728 parts In-Stock

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Futuretech Components

Singapore . 1,000 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 864 parts In-Stock

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GreenTree Electronics

Israel . 796 parts In-Stock

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Corphita

USA . 374 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Unlock endless possibilities with the Micron Technology PC28F256P30TFE Flash Memory. Boasting top-notch quality and reliability, this product offers seamless performance in various applications. From industrial to consumer electronics, this flash memory delivers unparalleled value with its exceptional speed, low power consumption, and versatile features. Elevate your devices with Micron Technology and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the flash memory, making it reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a low supply voltage of 1.8V, offering energy savings and reducing power consumption.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent rate, enhancing performance and reliability.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures up to 85°C, making it suitable for industrial applications.

Technology: CMOS

Uses CMOS technology for low power consumption, high speed, and reliability, making it a cost-effective and efficient choice.

Technical Specifications

Flash Memory PC28F256P30TFE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F256P30TFE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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