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PC28F256P30BFE

Micron Technology

PC28F256P30BFE by Micron Technology

Micron Technology's PC28F256P30BFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access time and low standby current.

Median Price

$6.532

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$6.532

100+ parts

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10

$6.532

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Chip Stock

USA . 9,577 parts In-Stock

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9,577

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Vyrian

USA . 5,746 parts In-Stock

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5,746

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 1,808 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 864 parts In-Stock

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864

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Touchstone Systems

USA . 728 parts In-Stock

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728

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Digiode

USA . 208 parts In-Stock

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208

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North Shore Components

USA . 95 parts In-Stock

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95

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Bristol Electronics

USA . 77 parts In-Stock

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77

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Sensible Micro Corp

USA . 34 parts In-Stock

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34

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NexGen Digital

USA . 9 parts In-Stock

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9

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PC Components Company LLC

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 261 parts In-Stock

1+ parts

$4.260

100+ parts

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261

$4.260

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Andel Nordic

Denmark . 2,581 parts In-Stock

1+ parts

$4.461

100+ parts

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1k+ parts

$4.283

10k+ parts

$4.283

2,581

$4.461

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$4.283

$4.283

Continental Prestige Electronics

USA . 3,203 parts In-Stock

1+ parts

$6.532

100+ parts

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$6.401

3,203

$6.532

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$6.401

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$6.532

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$6.401

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1,000

$6.532

$6.401

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Ampacity Inc.

Singapore . 515 parts In-Stock

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$9.000

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515

$9.000

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AZTECH Wire

Italy . 198 parts In-Stock

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$9.203

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198

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Perfect Parts

USA . 27,094 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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S.R.D Solutions

India . 10,120 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,308 parts In-Stock

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Kepictronics

USA . 5,600 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Corphita

USA . 1,161 parts In-Stock

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RC Electronics

USA . 873 parts In-Stock

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Futuretech Components

Singapore . 864 parts In-Stock

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864

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Benley Electronics

USA . 842 parts In-Stock

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842

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Argo Parts USA

USA . 390 parts In-Stock

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390

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Resion (Excess)

USA . 138 parts In-Stock

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138

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Computer Components Inc. - USA

USA . 43 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Micron Technology PC28F256P30BFE Flash Memory. Boasting superior quality and reliability, this innovative product offers seamless integration into a wide range of applications. With its advanced features and high performance, customers can enjoy faster data access, increased efficiency, and enhanced productivity. Trust in Micron Technology to deliver top-notch solutions that exceed expectations and elevate your experience to the next level.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Makes the product lightweight and durable.

Surface Mount:

YES - Allows for easy installation onto circuit boards.

Package Shape:

RECTANGULAR - Offers a compact design for space-saving.

Operating Mode:

SYNCHRONOUS - Provides efficient data transfer and processing.

Nominal Supply Voltage / Vsup (V):

1.8 - Low power consumption for energy efficiency.

Power Supplies (V):

1.8,1.8/3.3 - Versatile voltage options for different applications.

No. of Terminals:

64 - Enables connectivity with other components.

Package Style (Meter):

GRID ARRAY, THIN PROFILE - Facilitates heat dissipation and improved performance.

Maximum Operating Temperature:

85 °C - Suitable for harsh operating environments.

Organization:

16MX16 - Offers high memory capacity and data storage.

Minimum Operating Temperature:

40 °C - Can withstand extreme cold temperatures.

No. of Sectors/Size:

4,255 - Allows for efficient organization and management of data.

Terminal Finish:

TIN SILVER COPPER - Ensures good conductivity and signal transmission.

Terminal Position:

BOTTOM - Simplifies the installation process.

Maximum Seated Height:

1.2 mm - Low profile design for space-constrained applications.

Width:

10 mm - Compact size for easy integration.

Minimum Supply Voltage (Vsup):

1.7 V - Reliable operation even at low voltages.

Maximum Time At Peak Reflow Temperature (s):

30 - Resistant to high-temperature soldering processes.

Peak Reflow Temperature °C:

260 - Withstands high-temperature reflow soldering.

Type:

NOR TYPE - Suitable for high-speed read and write operations.

Common Flash Interface:

YES - Compatible with various devices and systems.

Length:

13 mm - Perfect dimensions for fitting into different devices.

Programming Voltage (V):

1.8 - Optimal voltage for programming operations.

Temperature Grade:

INDUSTRIAL - Suitable for industrial applications with temperature variations.

Technology:

CMOS - Provides low power consumption and fast operation.

Parallel or Serial:

PARALLEL - Allows for simultaneous data transfer.

Terminal Form:

BALL - Ensures secure connections and stability.

Sector Size (Words):

16K,64K - Allows for efficient data organization and management.

Maximum Supply Current:

31 mA - Low power consumption for energy efficiency.

No. of Words:

16777216 words - High memory capacity for storing large amounts of data.

Memory Width:

16 - Efficient data processing and retrieval.

Terminal Pitch:

1 mm - Allows for easy connection to other components.

No. of Words Code:

16M - Indicates the memory capacity of the product.

Command User Interface:

YES - User-friendly interface for easy operation.

Maximum Supply Voltage (Vsup):

2 V - Safe operating voltage for the product.

Boot Block:

BOTTOM - Simplifies the booting process for the device.

Memory Density:

268435456 bit - High-density memory for storing a large amount of data.

Memory IC Type:

FLASH - Fast and reliable data storage and retrieval.

Maximum Standby Current:

0.00021 Amp - Low standby power consumption for energy efficiency.

Maximum Access Time:

100 ns - Fast access time for quick data retrieval.

Technical Specifications

Flash Memory PC28F256P30BFE attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Additional Features:

ASYNCHRONOUS READ MODE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,255

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F256P30BFE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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