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PC28F256M29EWHD

Micron Technology

PC28F256M29EWHD by Micron Technology

Micron Technology's PC28F256M29EWHD is a 16MX16 NOR flash memory with 256 sectors, operating at 3V. It features a low-profile grid array package and asynchronous mode, suitable for industrial applications requiring fast access times of 100ns and a memory density of 268MB.

Median Price

$4.425

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 162 parts In-Stock

1+ parts

-

100+ parts

$4.490

1k+ parts

$3.700

10k+ parts

$3.420

162

-

$4.490

$3.700

$3.420

Chip1Stop

Japan . 162 parts In-Stock

1+ parts

-

100+ parts

$4.360

1k+ parts

-

10k+ parts

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162

-

$4.360

-

-

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$4.240

100+ parts

-

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-

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10

$4.240

-

-

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Chip Stock

USA . 22,100 parts In-Stock

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22,100

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Digiode

USA . 888 parts In-Stock

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-

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888

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IBS Electronics

USA . 162 parts In-Stock

1+ parts

-

100+ parts

$4.137

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-

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162

-

$4.137

-

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Vyrian

USA . 145 parts In-Stock

1+ parts

-

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145

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Cyclops Electronics Ltd

UK . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 162 parts In-Stock

1+ parts

$3.710

100+ parts

$3.617

1k+ parts

$3.599

10k+ parts

-

162

$3.710

$3.617

$3.599

-

Aztec Data Supply Inc.

USA . 1,539 parts In-Stock

1+ parts

$4.131

100+ parts

-

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1,539

$4.131

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Argo Parts USA

USA . 4,322 parts In-Stock

1+ parts

$4.240

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-

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4,322

$4.240

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$4.240

100+ parts

-

1k+ parts

$4.028

10k+ parts

$3.943

2,000

$4.240

-

$4.028

$3.943

Continental Prestige Electronics

USA . 1,765 parts In-Stock

1+ parts

$4.240

100+ parts

-

1k+ parts

-

10k+ parts

$4.155

1,765

$4.240

-

-

$4.155

Corohmni

South Africa . 524 parts In-Stock

1+ parts

$4.240

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524

$4.240

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-

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AZTECH Wire

Italy . 297 parts In-Stock

1+ parts

$17.453

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297

$17.453

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QUARKTWIN TECHNOLOGY LTD

USA . 13,259 parts In-Stock

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Microchip USA

USA . 3,110 parts In-Stock

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Corphita

USA . 2,060 parts In-Stock

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2,060

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Overview

Experience the next level of performance with the Micron Technology PC28F256M29EWHD Flash Memory. Manufactured by Micron Technology, a trusted leader in memory solutions, this product offers unparalleled quality and reliability. Ideal for a wide range of applications, this Flash Memory provides customers with fast access times, low power consumption, and high memory density. Upgrade your system with the Micron Technology PC28F256M29EWHD and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and lightweight, ideal for portable devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent read and write operations, enhancing the efficiency and speed of data access.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage ensures compatibility with a wide range of devices and power sources.

Page Size (words): 16/32

The multiple page size options provide flexibility in storing and accessing data efficiently in different file sizes.

Technology: CMOS

The CMOS technology used in the memory IC results in low power consumption and high-speed performance, making it energy-efficient and reliable.

Technical Specifications

Flash Memory PC28F256M29EWHD attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

100 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

256

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Page Size (words):

16/32

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.4 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00021 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11 mm

Trade Compliance

PC28F256M29EWHD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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