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PC28F256P30B85F

Micron Technology

PC28F256P30B85F by Micron Technology

Micron Technology's PC28F256P30B85F is a 16Mx16 NOR flash memory with 64 terminals in a grid array package. Operating at -40 to 85°C, it offers 16K and 64K sector sizes, parallel interface, and low standby current of 0.000115A. Ideal for industrial applications requiring high memory density and fast access times.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 14,800 parts In-Stock

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14,800

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Vyrian

USA . 1,537 parts In-Stock

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1,537

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Digiode

USA . 108 parts In-Stock

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108

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Nova Conductors

Japan . 26 parts In-Stock

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26

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 461 parts In-Stock

1+ parts

$3.380

100+ parts

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461

$3.380

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Ampacity Inc.

Singapore . 1,036 parts In-Stock

1+ parts

$4.000

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1,036

$4.000

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Corohmni

South Africa . 324 parts In-Stock

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$5.312

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324

$5.312

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AZTECH Wire

Italy . 240 parts In-Stock

1+ parts

$18.520

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240

$18.520

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Argo Parts USA

USA . 3,891 parts In-Stock

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3,891

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Continental Prestige Electronics

USA . 3,041 parts In-Stock

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3,041

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 414 parts In-Stock

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414

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Microchip USA

USA . 189 parts In-Stock

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189

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Overview

Discover the ultimate solution for your flash memory needs with the Micron Technology PC28F256P30B85F. This high-quality product offers unparalleled reliability and performance, thanks to Micron Technology's renowned expertise in semiconductor manufacturing. Ideal for a wide range of applications, this flash memory device provides customers with valuable benefits such as fast access times, low power consumption, and industrial-grade temperature tolerance. Say goodbye to slow data retrieval and hello to efficient storage with the Micron Technology PC28F256P30B85F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product durable and lightweight, ideal for portable devices.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving design.

Package Shape: SQUARE

The square shape of the package provides efficient use of space and easy integration into a circuit.

Power Supplies (V): 1.8,1.8/3.3

The wide range of power supply options makes this product versatile and compatible with various systems.

No. of Terminals: 64

With 64 terminals, this product offers multiple connection options and efficient data transfer.

Package Style (Meter): GRID ARRAY

The grid array package style ensures secure connections and reliable performance in demanding environments.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows this product to function effectively in various conditions.

Organization: 16MX16

The 16MX16 organization provides ample storage capacity for storing a large amount of data.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures this product can withstand cold environments without compromising performance.

No. of Sectors/Size: 4,255

With 4 sectors and 255 sector sizes, this product offers efficient data management and access.

Terminal Position: BOTTOM

The terminal position at the bottom of the package ensures secure connections and easy integration into a circuit.

Page Size (words): 4

The small page size of 4 words allows for quick and efficient data transfer and processing.

Type: NOR TYPE

The NOR type design of this product offers fast read and write speeds, ideal for high-performance applications.

Common Flash Interface: YES

The common flash interface allows for easy integration and compatibility with other devices.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature grade ensures reliable performance in harsh industrial environments.

Technology: CMOS

The CMOS technology used in this product provides low power consumption and high-speed operation.

Parallel or Serial: PARALLEL

The parallel interface offers fast data transfer speeds and efficient performance.

Terminal Form: BALL

The ball terminal form ensures secure connections and efficient data transfer.

Sector Size (Words): 16K,64K

With sector sizes of 16K and 64K, this product offers flexible data storage and access options.

Maximum Supply Current: 51 mA

The low maximum supply current of 51 mA helps in reducing power consumption and extending battery life.

No. of Words: 16777216 words

With a high number of words, this product offers ample storage capacity for large amounts of data.

Memory Width: 16

The memory width of 16 bits allows for efficient data processing and transfer.

Terminal Pitch: 1 mm

The 1 mm terminal pitch offers easy installation and secure connections in compact spaces.

No. of Words Code: 16M

The 16M words code provides efficient data storage and access capabilities.

Command User Interface: YES

The command user interface allows for easy communication with the device and efficient data management.

Boot Block: BOTTOM

The bottom boot block design ensures easy access and modification of system software.

Memory Density: 268435456 bit

The high memory density of 268435456 bits offers ample storage capacity for a large amount of data.

Memory IC Type: FLASH

The flash memory IC type offers fast read and write speeds, ideal for high-speed data processing.

Maximum Standby Current: 0.000115 Amp

The low maximum standby current helps in reducing power consumption and extending battery life.

Maximum Access Time: 85 ns

The fast maximum access time of 85 ns ensures quick data retrieval and efficient performance.

Technical Specifications

Flash Memory PC28F256P30B85F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

85 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

S-PBGA-B64

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

4,255

No. of Terminals:

64

No. of Words:

16777216 words

No. of Words Code:

16M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000115 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

51 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

PC28F256P30B85F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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