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PC28F128J3F75A

Micron Technology

PC28F128J3F75A by Micron Technology

Micron Technology's PC28F128J3F75A is a 128Mb NOR flash memory with 8MX16 organization, operating at 3V. It features a max access time of 75ns, suitable for industrial applications requiring fast and reliable non-volatile memory storage. With parallel interface and common flash interface, it offers high-speed data transfer and ease of integration in various electronic devices.

Median Price

$7.015

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,361 parts In-Stock

1+ parts

$8.080

100+ parts

$6.510

1k+ parts

$6.010

10k+ parts

$5.800

1,361

$8.080

$6.510

$6.010

$5.800

DigiKey

USA . 3,456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.950

10k+ parts

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3,456

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$5.950

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Distributors (In-Stock)

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Digiode

USA . 654 parts In-Stock

1+ parts

$7.676

100+ parts

-

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654

$7.676

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Component Electronics Inc.

Canada . 8 parts In-Stock

1+ parts

$11.540

100+ parts

$8.650

1k+ parts

$7.500

10k+ parts

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8

$11.540

$8.650

$7.500

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NAC Semi

USA . 82 parts In-Stock

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$31.250

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82

$31.250

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Chip Stock

USA . 33,500 parts In-Stock

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33,500

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Cyclops Electronics Ltd

UK . 10,346 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,966 parts In-Stock

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ComSIT USA

USA . 5,966 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Touchstone Systems

USA . 2,435 parts In-Stock

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Astute Electronics Inc

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Vyrian

USA . 1,006 parts In-Stock

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1,006

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Mil-Aero Solutions, Inc.

USA . 838 parts In-Stock

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838

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Kruse Electronics AG

Switzerland . 288 parts In-Stock

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288

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Kruse

Germany . 288 parts In-Stock

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288

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Sensible Micro Corp

USA . 217 parts In-Stock

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217

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Tectiva GmbH

Germany . 150 parts In-Stock

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150

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Bristol Electronics

USA . 80 parts In-Stock

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80

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Nova Conductors

Japan . 50 parts In-Stock

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50

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PC Components Company LLC

USA . 49 parts In-Stock

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49

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Connect4Technologies Inc.

Canada . 46 parts In-Stock

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Semi Source

USA . 17 parts In-Stock

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Atlantic Semiconductor

USA . 4 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 6,919 parts In-Stock

1+ parts

$4.550

100+ parts

$4.310

1k+ parts

$4.180

10k+ parts

-

6,919

$4.550

$4.310

$4.180

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Semicontronic

India . 1,092 parts In-Stock

1+ parts

$4.670

100+ parts

$4.553

1k+ parts

$4.530

10k+ parts

-

1,092

$4.670

$4.553

$4.530

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Corphita

USA . 2,483 parts In-Stock

1+ parts

$7.272

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2,483

$7.272

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Andel Nordic

Denmark . 1,112 parts In-Stock

1+ parts

$10.588

100+ parts

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$10.165

10k+ parts

$10.165

1,112

$10.588

-

$10.165

$10.165

Benley Electronics

USA . 36 parts In-Stock

1+ parts

$14.000

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36

$14.000

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Microchip USA

USA . 4,453 parts In-Stock

1+ parts

$14.590

100+ parts

$14.590

1k+ parts

$14.590

10k+ parts

$14.590

4,453

$14.590

$14.590

$14.590

$14.590

Futuretech Components

Singapore . 30,000 parts In-Stock

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Perfect Parts

USA . 26,494 parts In-Stock

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26,494

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 13,079 parts In-Stock

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13,079

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RC Electronics

USA . 7,481 parts In-Stock

1+ parts

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$6.610

1k+ parts

$6.040

10k+ parts

$5.860

7,481

-

$6.610

$6.040

$5.860

Continental Prestige Electronics

USA . 6,944 parts In-Stock

1+ parts

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6,944

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Epart123

USA . 5,184 parts In-Stock

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$6.150

5,184

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$6.150

S.R.D Solutions

India . 5,000 parts In-Stock

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Kepictronics

USA . 4,320 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 3,367 parts In-Stock

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3,367

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Argo Parts USA

USA . 2,331 parts In-Stock

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Assy Fe

Spain . 864 parts In-Stock

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864

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Aranea Global

USA . 100 parts In-Stock

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100

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Legend Electronics Inc. (Excess)

USA . 100 parts In-Stock

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100

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Speed Components Ltd (Excess)

Israel . 100 parts In-Stock

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100

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iodParts Technologies Inc.

India . 62 parts In-Stock

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Overview

Experience the superior quality and reliability of Micron Technology with the PC28F128J3F75A Flash Memory. This versatile product is perfect for a wide range of applications, offering customers unmatched value and benefits. With its advanced technology and industrial-grade design, this flash memory delivers high performance and efficiency to meet all your storage needs. Upgrade to Micron Technology and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the product suitable for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, making data retrieval faster and more efficient.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions and high usage.

Technology: CMOS

CMOS technology ensures low power consumption, prolonging battery life in devices that use this flash memory.

Memory Density: 134217728 bit

High memory density allows for storing large amounts of data in a compact size, making it ideal for devices with limited space.

Maximum Access Time: 75 ns

A fast access time ensures quick data retrieval, reducing latency and improving overall performance of the product.

Technical Specifications

Flash Memory PC28F128J3F75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

128

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

54 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F128J3F75A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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