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PC28F320J3F75A

Micron Technology

PC28F320J3F75A by Micron Technology

Micron Technology's PC28F320J3F75A is a 32Mb NOR Flash Memory with 2MX16 organization, operating at -40 to 85°C. It features a parallel interface, 1mm terminal pitch, and 80mA max supply current. Ideal for industrial applications requiring fast access times and reliable non-volatile memory storage.

Median Price

$1.490

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 168,555 parts In-Stock

1+ parts

$1.520

100+ parts

$1.460

1k+ parts

$1.410

10k+ parts

$1.360

168,555

$1.520

$1.460

$1.410

$1.360

Verical

USA . 168,555 parts In-Stock

1+ parts

-

100+ parts

$1.460

1k+ parts

$1.410

10k+ parts

$1.360

168,555

-

$1.460

$1.410

$1.360

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

-

10k+ parts

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700

$1.410

-

-

-

Digiode

USA . 112 parts In-Stock

1+ parts

$1.624

100+ parts

-

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-

10k+ parts

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112

$1.624

-

-

-

Chip Stock

USA . 38,984 parts In-Stock

1+ parts

-

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38,984

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ComSIT Distribution GmbH

Germany . 22,500 parts In-Stock

1+ parts

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22,500

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Cyclops Electronics Ltd

UK . 17,110 parts In-Stock

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Vyrian

USA . 7,836 parts In-Stock

1+ parts

-

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7,836

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PC Components Company LLC

USA . 344 parts In-Stock

1+ parts

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344

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Bristol Electronics

USA . 225 parts In-Stock

1+ parts

-

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225

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BCID Electronics Ltd.

Israel . 10 parts In-Stock

1+ parts

-

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10

-

-

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LIBRA Elektronik GmbH

Germany . 9 parts In-Stock

1+ parts

-

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9

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A2Z Electronics, Inc.

USA . 1 parts In-Stock

1+ parts

-

100+ parts

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1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 171,344 parts In-Stock

1+ parts

$1.240

100+ parts

$1.209

1k+ parts

$1.203

10k+ parts

-

171,344

$1.240

$1.209

$1.203

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Ampacity Inc.

Singapore . 171,230 parts In-Stock

1+ parts

$1.240

100+ parts

-

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-

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171,230

$1.240

-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$1.382

100+ parts

-

1k+ parts

$1.327

10k+ parts

-

1,000

$1.382

-

$1.327

-

Continental Prestige Electronics

USA . 5,955 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

-

10k+ parts

$1.382

5,955

$1.410

-

-

$1.382

Argo Parts USA

USA . 3,481 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

-

10k+ parts

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3,481

$1.410

-

-

-

Component Stockers USA

USA . 293,751 parts In-Stock

1+ parts

$1.460

100+ parts

$1.400

1k+ parts

$1.360

10k+ parts

$1.260

293,751

$1.460

$1.400

$1.360

$1.260

Corphita

USA . 1,495 parts In-Stock

1+ parts

$1.539

100+ parts

-

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1,495

$1.539

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Andel Nordic

Denmark . 3,993 parts In-Stock

1+ parts

$6.935

100+ parts

-

1k+ parts

$6.658

10k+ parts

$6.658

3,993

$6.935

-

$6.658

$6.658

AZTECH Wire

Italy . 929 parts In-Stock

1+ parts

$9.140

100+ parts

-

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929

$9.140

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RC Electronics

USA . 49,723 parts In-Stock

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49,723

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S.R.D Solutions

India . 33,000 parts In-Stock

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Kepictronics

USA . 6,541 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 6,401 parts In-Stock

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6,401

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Perfect Parts

USA . 3,646 parts In-Stock

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3,646

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Futuretech Components

Singapore . 1,227 parts In-Stock

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1,227

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ChipstoGo Electronic ltd

UK . 233 parts In-Stock

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233

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Authorized Procurement Solutions

USA . 220 parts In-Stock

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220

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GreenTree Electronics

Israel . 220 parts In-Stock

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220

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Legend Electronics Inc. (Excess)

USA . 220 parts In-Stock

1+ parts

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220

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Speed Components Ltd (Excess)

Israel . 220 parts In-Stock

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220

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Overview

Elevate your device's performance with the Micron Technology PC28F320J3F75A Flash Memory. Trusted by industry leaders, Micron Technology delivers top-notch quality and reliability. This flash memory is designed for applications that demand fast access times and efficient data storage. Experience seamless operation and enhanced functionality with this innovative product. Upgrade your system today with Micron Technology's cutting-edge flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good protection for the internal components of the flash memory, ensuring durability and longevity.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for efficient and independent data transfer, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures compatibility with a wide range of systems and devices.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance, making this flash memory efficient and reliable.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand extended use in varying environmental conditions.

Memory Density: 33554432 bit

The high memory density of 33554432 bits allows for storing a large amount of data in a compact form factor.

Technical Specifications

Flash Memory PC28F320J3F75A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

75 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

32

No. of Terminals:

64

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

PC28F320J3F75A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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