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N25Q032A11EF640E

Micron Technology

N25Q032A11EF640E by Micron Technology

Micron Technology's N25Q032A11EF640E is a 32Mb Flash Memory with 1.8V supply voltage, operating at up to 108MHz clock frequency. Ideal for industrial applications, it offers synchronous operation in a small outline package with 1Mx32 organization.

Median Price

$2.890

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,122 parts In-Stock

1+ parts

$3.850

100+ parts

$1.930

1k+ parts

$1.810

10k+ parts

$1.790

4,122

$3.850

$1.930

$1.810

$1.790

Verical

USA . 4,122 parts In-Stock

1+ parts

-

100+ parts

$1.930

1k+ parts

$1.810

10k+ parts

$1.790

4,122

-

$1.930

$1.810

$1.790

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 634 parts In-Stock

1+ parts

$0.475

100+ parts

-

1k+ parts

-

10k+ parts

-

634

$0.475

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$1.050

-

-

-

Digiode

USA . 971 parts In-Stock

1+ parts

$3.658

100+ parts

-

1k+ parts

-

10k+ parts

-

971

$3.658

-

-

-

Chip Stock

USA . 19,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,200

-

-

-

-

Vyrian

USA . 3,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,860

-

-

-

-

ComSIT Distribution GmbH

Germany . 1,176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,176

-

-

-

-

Euro-Tech

UK . 663 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

663

-

-

-

-

Bristol Electronics

USA . 550 parts In-Stock

1+ parts

-

100+ parts

$1.406

1k+ parts

$0.787

10k+ parts

-

550

-

$1.406

$0.787

-

Elcom Components

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,861 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

4,861

$1.050

-

-

-

Continental Prestige Electronics

USA . 2,037 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

$1.029

2,037

$1.050

-

-

$1.029

Ampacity Inc.

Singapore . 4,032 parts In-Stock

1+ parts

$1.640

100+ parts

-

1k+ parts

-

10k+ parts

-

4,032

$1.640

-

-

-

Semicontronic

India . 3,716 parts In-Stock

1+ parts

$1.640

100+ parts

$1.599

1k+ parts

$1.591

10k+ parts

-

3,716

$1.640

$1.599

$1.591

-

Corphita

USA . 1,512 parts In-Stock

1+ parts

$3.465

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

$3.465

-

-

-

Corohmni

South Africa . 55 parts In-Stock

1+ parts

$4.388

100+ parts

-

1k+ parts

-

10k+ parts

-

55

$4.388

-

-

-

Aztec Data Supply Inc.

USA . 70 parts In-Stock

1+ parts

$5.490

100+ parts

-

1k+ parts

-

10k+ parts

-

70

$5.490

-

-

-

Kepictronics

USA . 75,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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75,428

-

-

-

-

Perfect Parts

USA . 13,188 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,188

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,519 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,519

-

-

-

-

RC Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Speed Components Ltd (Excess)

Israel . 107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

107

-

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1.029

1k+ parts

$0.997

10k+ parts

$0.976

100

-

$1.029

$0.997

$0.976

Overview

Unlock the power of reliable and high-performance flash memory with the N25Q032A11EF640E by Micron Technology. Designed with precision and expertise, this product offers seamless operation in a wide range of applications. From industrial automation to consumer electronics, this flash memory provides unparalleled speed and efficiency. Trust in Micron's reputation for quality and innovation to bring you a cutting-edge solution that delivers value and reliability. Upgrade your devices with the N25Q032A11EF640E and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a lower supply voltage helps in reducing power consumption, making it more energy-efficient.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures without compromising performance, suitable for industrial applications.

Organization: 1MX32

Provides a large memory capacity of 1 megabyte organized in a 32-bit width configuration for storing a significant amount of data.

Maximum Clock Frequency (fCLK): 108 MHz

High clock frequency enables fast data processing and access speeds, making it suitable for applications requiring quick data retrieval.

Memory Density: 33554432 bit

High memory density allows for storing a large amount of data in a compact form factor, ideal for devices with limited space for memory storage.

Technical Specifications

Flash Memory N25Q032A11EF640E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

N25Q032A11EF640E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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