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N25Q128A13EF840E

Micron Technology

N25Q128A13EF840E by Micron Technology

N25Q128A13EF840E by Micron Technology is a NOR flash memory with 16MX8 organization, operating at 3V. It features a max clock frequency of 108 MHz and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Chip Stock

USA . 4,500 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 2,387 parts In-Stock

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Vyrian

USA . 687 parts In-Stock

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Digiode

USA . 354 parts In-Stock

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354

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Sensible Micro Corp

USA . 170 parts In-Stock

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170

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Nova Conductors

Japan . 88 parts In-Stock

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88

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LIBRA Elektronik GmbH

Germany . 49 parts In-Stock

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49

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Prism Electronics

USA . 45 parts In-Stock

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45

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Carlin Systems, Inc.

USA . 38 parts In-Stock

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38

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Elcom Components

USA . 34 parts In-Stock

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34

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North Shore Components

USA . 15 parts In-Stock

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15

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J2 Sourcing AB

Sweden . 14 parts In-Stock

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ComSIT Distribution GmbH

Germany . 14 parts In-Stock

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14

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ComSIT USA

USA . 14 parts In-Stock

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14

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Bristol Electronics

USA . 13 parts In-Stock

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NexGen Digital

USA . 10 parts In-Stock

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10

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Inventory MP

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$3.444

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$3.272

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$3.272

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150

$3.444

$3.272

$3.272

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Corohmni

South Africa . 130 parts In-Stock

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$4.015

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130

$4.015

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Aztec Data Supply Inc.

USA . 224 parts In-Stock

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$5.570

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224

$5.570

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AZTECH Wire

Italy . 324 parts In-Stock

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$8.774

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324

$8.774

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Ampacity Inc.

Singapore . 1,598 parts In-Stock

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$14.000

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$14.000

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Semicontronic

India . 1,458 parts In-Stock

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$16.000

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$15.600

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$15.520

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$16.000

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Perfect Parts

USA . 21,124 parts In-Stock

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Continental Prestige Electronics

USA . 6,776 parts In-Stock

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RC Electronics

USA . 6,489 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,690 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 3,904 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Kepictronics

USA . 1,920 parts In-Stock

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Corphita

USA . 1,684 parts In-Stock

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Futuretech Components

Singapore . 720 parts In-Stock

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720

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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Overview

Experience seamless performance and reliable data storage with the N25Q128A13EF840E by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-quality flash memory products that deliver exceptional speed and efficiency. Ideal for a wide range of applications, this product offers customers unparalleled value, benefits, and advantages. Trust in Micron Technology to provide you with the best-in-class flash memory solutions for your business needs. Elevate your performance with the N25Q128A13EF840E today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory chip, ensuring long-lasting performance.

Surface Mount: YES

Easy to install on a circuit board, making the integration process smooth and efficient.

Operating Mode: SYNCHRONOUS

High-speed data transfer and communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 3

Compatible with common voltage standards, ensuring easy integration with existing systems.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, suitable for industrial or automotive applications.

Memory Density: 134217728 bit

High storage capacity for storing a large amount of data in a compact form factor.

Endurance: 100000 Write/Erase Cycles

Long-lasting reliability with a high number of write/erase cycles, ensuring data integrity over time.

Technical Specifications

Flash Memory N25Q128A13EF840E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13EF840E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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