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N25Q256A13ESF40F

Micron Technology

N25Q256A13ESF40F by Micron Technology

Micron Technology's N25Q256A13ESF40F is a 256Mbit NOR flash memory with SPI serial bus, operating at 108MHz. It features 100000 write/erase cycles endurance and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring high-speed data transfer and reliable non-volatile storage.

Median Price

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Lifecycle Status

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8

In-Stock Inventory

1k+

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Chip Stock

USA . 15,410 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Touchstone Systems

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Vyrian

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Digiode

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Nova Conductors

Japan . 700 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Cyclops Electronics Ltd

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Andel Nordic

Denmark . 1,508 parts In-Stock

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$2.618

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$2.513

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Ampacity Inc.

Singapore . 1,145 parts In-Stock

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$6.000

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AZTECH Wire

Italy . 378 parts In-Stock

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$10.549

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Perfect Parts

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Continental Prestige Electronics

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RC Electronics

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Authorized Procurement Solutions

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Kepictronics

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Argo Parts USA

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Futuretech Components

Singapore . 2,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,000 parts In-Stock

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Corphita

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Benley Electronics

USA . 1,640 parts In-Stock

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Alle Elektronik GmbH

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Emar International I/E

Canada . 1,000 parts In-Stock

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Bastille Electronics

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Cyclops Electronics Ltd (Excess)

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Overview

Elevate your data storage experience with the N25Q256A13ESF40F by Micron Technology. This high-quality flash memory device offers unparalleled reliability and performance, making it the perfect solution for a wide range of applications. With its advanced technology and industrial-grade temperature grade, this NOR type memory IC provides 256M words of memory density, ensuring optimal data retention and endurance. Trust in Micron Technology to deliver exceptional value and benefits to meet all your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring longevity and affordability.

Nominal Supply Voltage / Vsup (V): 3

Standard voltage for compatibility with most devices and systems.

Operating Mode: SYNCHRONOUS

Efficient synchronous operation for faster data read and write speeds.

No. of Terminals: 16

Sufficient number of terminals for stable and reliable connections.

Maximum Operating Temperature: 85 °C

Wide temperature range for versatile use in various environments.

Organization: 256MX1

Optimized memory organization for efficient data storage and retrieval.

Type: NOR TYPE

NOR flash memory type for reliable and fast random access to data.

Endurance: 100000 Write/Erase Cycles

High endurance for prolonged use and frequent data read/write operations.

Technical Specifications

Flash Memory N25Q256A13ESF40F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

7.5 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q256A13ESF40F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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