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N25Q128A13ESE40G

Micron Technology

N25Q128A13ESE40G by Micron Technology

N25Q128A13ESE40G by Micron Technology is a NOR type flash memory with 16Mx8 organization, operating at 108MHz. It has a max supply voltage of 3.6V and endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed serial data storage and retrieval.

Median Price

$1.307

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.307

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$1.307

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Vyrian

USA . 744 parts In-Stock

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744

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Digiode

USA . 640 parts In-Stock

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640

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Sternenhof Electronics

Switzerland . 470 parts In-Stock

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470

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Contempo Components LLC

USA . 24 parts In-Stock

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Martec Srl

Italy . 10 parts In-Stock

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PC Components Company LLC

USA . 9 parts In-Stock

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Bristol Electronics

USA . 9 parts In-Stock

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Rebound Electronics

UK . 3 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,077 parts In-Stock

1+ parts

$1.307

100+ parts

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4,077

$1.307

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Continental Prestige Electronics

USA . 3,175 parts In-Stock

1+ parts

$1.307

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$1.281

3,175

$1.307

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$1.281

Netroflash

USA . 50 parts In-Stock

1+ parts

$1.307

100+ parts

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$1.242

10k+ parts

$1.216

50

$1.307

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$1.242

$1.216

Aztec Data Supply Inc.

USA . 75 parts In-Stock

1+ parts

$2.330

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75

$2.330

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Corohmni

South Africa . 362 parts In-Stock

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$3.283

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362

$3.283

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$4.115

100+ parts

$3.909

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$3.909

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450

$4.115

$3.909

$3.909

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Semicontronic

India . 595 parts In-Stock

1+ parts

$6.000

100+ parts

$5.850

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$5.820

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595

$6.000

$5.850

$5.820

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Ampacity Inc.

Singapore . 1,116 parts In-Stock

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$8.000

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$8.000

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AZTECH Wire

Italy . 251 parts In-Stock

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$9.890

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RC Electronics

USA . 4,050 parts In-Stock

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Perfect Parts

USA . 4,032 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Corphita

USA . 1,328 parts In-Stock

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Futuretech Components

Singapore . 720 parts In-Stock

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720

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Fairview Electronics Ltd

UK . 430 parts In-Stock

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430

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Microchip USA

USA . 270 parts In-Stock

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Kepictronics

USA . 104 parts In-Stock

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EMSNET (Excess)

USA . 11 parts In-Stock

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Overview

Elevate your devices with the N25Q128A13ESE40G by Micron Technology, a top-tier flash memory solution that guarantees reliability and performance. As a leading manufacturer in the industry, Micron Technology ensures superior quality and innovation in every product they offer. With applications ranging from consumer electronics to automotive systems, this small outline package delivers seamless integration and maximum efficiency. Experience the value of fast data transfer speeds, high endurance, and versatile programming options with the N25Q128A13ESE40G. Upgrade your technology today and unlock a world of possibilities with Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material helps ensure the product is long-lasting and easy to handle.

Operating Mode: SYNCHRONOUS

Allows for efficient data transfer and communication with other synchronous devices.

Nominal Supply Voltage / Vsup: 3V

Optimal supply voltage ensures stable and reliable performance of the flash memory.

Write Protection: HARDWARE/SOFTWARE

Offers multiple levels of protection to prevent accidental data loss or corruption.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity for improved efficiency.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures longevity and reliability of the flash memory for repeated read/write operations.

Technical Specifications

Flash Memory N25Q128A13ESE40G attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.16 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

5.285 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q128A13ESE40G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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